TY - GEN
T1 - Broadband high-efficiency linear power amplifier design for millimeter-wave 5G
AU - Mayeda, Jill C.
AU - Lopez, Jerry
AU - Lie, Donald Y.C.
N1 - Publisher Copyright:
© 2020 IEEE
PY - 2020
Y1 - 2020
N2 - We will discuss some design insights on broadband linear and highly-efficient medium-power power amplifiers (PA) for millimeter-wave (mm-Wave) 5G applications. These broadband mm-Wave PAs are targeted to cover most of the key 5G FR2 band (i.e., 24.25 to 43.5 GHz), and support 5G NR modulated broadband signals with high peak-to-average-power-ratio (PAPR). For example, they can operate at both 28 and 37 GHz, with 3dB bandwidth of ~20 GHz or greater with good linearity and power-added-efficiency (PAE). We will present our mm-Wave PA designed in advanced 40 nm GaN technology as an example, and compare its performance with other state-of-the-art broadband 5G mm-Wave PAs designed in CMOS and SiGe BiCMOS as reported in the literature. These prototype medium-power mm-Wave PAs reveal performance trade-offs on POUT, linearity, PAE and bandwidth, depending on the selection of PA topologies (i.e., Doherty, differential, stacked), device technologies (III-V vs. silicon), biasing schemes and matching network, etc. Measurement data using 5G NR 900 MHz signal with 256 QAM modulation suggests our GaN PA can achieve good linearity with EVM < 5% at POUT, Linear > 10 dBm for both 28 and 38 GHz simultaneously without predistortion, and the PA also achieves max. PAE > 30% for CW operation.
AB - We will discuss some design insights on broadband linear and highly-efficient medium-power power amplifiers (PA) for millimeter-wave (mm-Wave) 5G applications. These broadband mm-Wave PAs are targeted to cover most of the key 5G FR2 band (i.e., 24.25 to 43.5 GHz), and support 5G NR modulated broadband signals with high peak-to-average-power-ratio (PAPR). For example, they can operate at both 28 and 37 GHz, with 3dB bandwidth of ~20 GHz or greater with good linearity and power-added-efficiency (PAE). We will present our mm-Wave PA designed in advanced 40 nm GaN technology as an example, and compare its performance with other state-of-the-art broadband 5G mm-Wave PAs designed in CMOS and SiGe BiCMOS as reported in the literature. These prototype medium-power mm-Wave PAs reveal performance trade-offs on POUT, linearity, PAE and bandwidth, depending on the selection of PA topologies (i.e., Doherty, differential, stacked), device technologies (III-V vs. silicon), biasing schemes and matching network, etc. Measurement data using 5G NR 900 MHz signal with 256 QAM modulation suggests our GaN PA can achieve good linearity with EVM < 5% at POUT, Linear > 10 dBm for both 28 and 38 GHz simultaneously without predistortion, and the PA also achieves max. PAE > 30% for CW operation.
KW - 5G
KW - CMOS
KW - CMOS-SOI
KW - GaN
KW - Millimeter-wave (mm-Wave)
KW - Phased-array
KW - Power Amplifier (PA)
KW - SiGe
UR - http://www.scopus.com/inward/record.url?scp=85109298346&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85109298346
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
Y2 - 10 October 2020 through 21 October 2020
ER -