Abstract
The carrier lifetime in boron-doped Czochralski Si is strongly reduced by irradiation (space-based solar cells) or illumination (terrestrial cells). The culprits are believed to be boron-oxygen complexes. We use first-principles theory to predict the structure, electrical activity, and stability of complexes involving substitutional or interstitial B and interstitial O or oxygen dimers. Four complexes with comparable binding energies and thermodynamic gap levels are identified and their local vibrational modes predicted. Replacing B with Ga yields complexes with much smaller binding energies.
Original language | English |
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Pages (from-to) | 133-136 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 376-377 |
Issue number | 1 |
DOIs | |
State | Published - Apr 1 2006 |
Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005 |
Keywords
- BO complexes
- Silicon
- Theory