Boron-oxygen complexes in Si

M. Sanati, S. K. Estreicher

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

The carrier lifetime in boron-doped Czochralski Si is strongly reduced by irradiation (space-based solar cells) or illumination (terrestrial cells). The culprits are believed to be boron-oxygen complexes. We use first-principles theory to predict the structure, electrical activity, and stability of complexes involving substitutional or interstitial B and interstitial O or oxygen dimers. Four complexes with comparable binding energies and thermodynamic gap levels are identified and their local vibrational modes predicted. Replacing B with Ga yields complexes with much smaller binding energies.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
StatePublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

Keywords

  • BO complexes
  • Silicon
  • Theory

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