Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding

S. K. Estreicher, C. H. Seager, R. A. Anderson

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

The {D,H}+ complex in silicon, with D=P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.

Original languageEnglish
Pages (from-to)1773-1775
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number14
DOIs
StatePublished - 1991

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