Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding

S. K. Estreicher; C. H. Seager; R. A. Anderson

doi:10.1063/1.106196

Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding

S. K. Estreicher, C. H. Seager, R. A. Anderson

Physics

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22 Scopus citations

Abstract

The {D,H}⁺ complex in silicon, with D=P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}⁰ and {D,H}⁺ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.

Original language	English
Pages (from-to)	1773-1775
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	14
DOIs	https://doi.org/10.1063/1.106196
State	Published - 1991

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title = "Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding",

abstract = "The {D,H}+ complex in silicon, with D=P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.",

author = "Estreicher, {S. K.} and Seager, {C. H.} and Anderson, {R. A.}",

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N2 - The {D,H}+ complex in silicon, with D=P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.

AB - The {D,H}+ complex in silicon, with D=P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.

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Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding

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