Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

T. C. Doan; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4963128

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

T. C. Doan, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride (h-BN) epilayers synthesized by metal-organic chemical vapor deposition. Bias dependent photocurrent excitation spectra clearly resolved the band-to-band, free exciton, and impurity bound exciton transitions. The energy bandgap (E_g), binding energy of free exciton (E_x), and binding energy of impurity bound exciton (E_bx) in h-BN have been directly obtained from the photocurrent spectral peak positions and comparison with the related photoluminescence emission peaks. The direct observation of the band-to-band transition suggests that h-BN is a semiconductor with a direct energy bandgap of E_g = 6.42 eV at room temperature. These results provide a more coherent picture regarding the fundamental parameters of this important emerging ultra-wide bandgap semiconductor.

Original language	English
Article number	102101
Journal	Applied Physics Letters
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.4963128
State	Published - Sep 19 2016

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@article{36d1cb12cc79430896147ea76e6362df,

title = "Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy",

abstract = "Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride (h-BN) epilayers synthesized by metal-organic chemical vapor deposition. Bias dependent photocurrent excitation spectra clearly resolved the band-to-band, free exciton, and impurity bound exciton transitions. The energy bandgap (Eg), binding energy of free exciton (Ex), and binding energy of impurity bound exciton (Ebx) in h-BN have been directly obtained from the photocurrent spectral peak positions and comparison with the related photoluminescence emission peaks. The direct observation of the band-to-band transition suggests that h-BN is a semiconductor with a direct energy bandgap of Eg = 6.42 eV at room temperature. These results provide a more coherent picture regarding the fundamental parameters of this important emerging ultra-wide bandgap semiconductor.",

author = "Doan, {T. C.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The efforts of MOCVD growth and optical property studies of BN are supported by ARO (W911NF-16-1-0268) and monitored by Dr. Michael Gerhold. The device fabrication and structure characterization efforts are supported by NSF (ECCS-1402886). Jiang and Lin are grateful to the AT and T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = sep,

day = "19",

doi = "10.1063/1.4963128",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

AU - Doan, T. C.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The efforts of MOCVD growth and optical property studies of BN are supported by ARO (W911NF-16-1-0268) and monitored by Dr. Michael Gerhold. The device fabrication and structure characterization efforts are supported by NSF (ECCS-1402886). Jiang and Lin are grateful to the AT and T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. Publisher Copyright: © 2016 Author(s).

PY - 2016/9/19

Y1 - 2016/9/19

N2 - Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride (h-BN) epilayers synthesized by metal-organic chemical vapor deposition. Bias dependent photocurrent excitation spectra clearly resolved the band-to-band, free exciton, and impurity bound exciton transitions. The energy bandgap (Eg), binding energy of free exciton (Ex), and binding energy of impurity bound exciton (Ebx) in h-BN have been directly obtained from the photocurrent spectral peak positions and comparison with the related photoluminescence emission peaks. The direct observation of the band-to-band transition suggests that h-BN is a semiconductor with a direct energy bandgap of Eg = 6.42 eV at room temperature. These results provide a more coherent picture regarding the fundamental parameters of this important emerging ultra-wide bandgap semiconductor.

AB - Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride (h-BN) epilayers synthesized by metal-organic chemical vapor deposition. Bias dependent photocurrent excitation spectra clearly resolved the band-to-band, free exciton, and impurity bound exciton transitions. The energy bandgap (Eg), binding energy of free exciton (Ex), and binding energy of impurity bound exciton (Ebx) in h-BN have been directly obtained from the photocurrent spectral peak positions and comparison with the related photoluminescence emission peaks. The direct observation of the band-to-band transition suggests that h-BN is a semiconductor with a direct energy bandgap of Eg = 6.42 eV at room temperature. These results provide a more coherent picture regarding the fundamental parameters of this important emerging ultra-wide bandgap semiconductor.

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U2 - 10.1063/1.4963128

DO - 10.1063/1.4963128

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VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 102101

ER -

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

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