Band structure of superlattice with graded interfaces

H. X. Jiang; J. Y. Lin

doi:10.1063/1.338214

Band structure of superlattice with graded interfaces

H. X. Jiang, J. Y. Lin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The electron-energy levels in the GaAs-Ga_1-xAl_xAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.

Original language	English
Pages (from-to)	624-628
Number of pages	5
Journal	Journal of Applied Physics
Volume	61
Issue number	2
DOIs	https://doi.org/10.1063/1.338214
State	Published - 1987

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title = "Band structure of superlattice with graded interfaces",

abstract = "The electron-energy levels in the GaAs-Ga1-xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.",

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N2 - The electron-energy levels in the GaAs-Ga1-xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.

AB - The electron-energy levels in the GaAs-Ga1-xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.

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U2 - 10.1063/1.338214

DO - 10.1063/1.338214

M3 - Article

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SP - 624

EP - 628

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -

Band structure of superlattice with graded interfaces

Abstract

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