Abstract
The electron-energy levels in the GaAs-Ga1-xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.
Original language | English |
---|---|
Pages (from-to) | 624-628 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 61 |
Issue number | 2 |
DOIs | |
State | Published - 1987 |