Band structure of superlattice with graded interfaces

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Abstract

The electron-energy levels in the GaAs-Ga1-xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.

Original languageEnglish
Pages (from-to)624-628
Number of pages5
JournalJournal of Applied Physics
Volume61
Issue number2
DOIs
StatePublished - 1987

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