Band-edge transitions in hexagonal boron nitride epilayers

S. Majety; X. K. Cao; J. Li; R. Dahal; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4742194

Band-edge transitions in hexagonal boron nitride epilayers

S. Majety, X. K. Cao, J. Li, R. Dahal, J. Y. Lin, H. X. Jiang

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Abstract

Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E e m i c ) is about 1.7 times stronger than the component along the c-axis (E e m i ∥ c ). This is in contrast to AlN, in which the band-edge emission is known to be polarized along the c-axis, (E e m i ∥ c ). Time-resolved PL measurements revealed a decay lifetime of around 4.3 ns at 10 K for the dominant band-edge transition line. The present result together with the ability of p-type doping of hBN represents a major step towards the realization of hBN based practical devices.

Original language	English
Article number	051110
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4742194
State	Published - Jul 30 2012

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@article{518d6b9b73c04519bc5d5bc86832b48d,

title = "Band-edge transitions in hexagonal boron nitride epilayers",

abstract = "Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E e m i c ) is about 1.7 times stronger than the component along the c-axis (E e m i ∥ c ). This is in contrast to AlN, in which the band-edge emission is known to be polarized along the c-axis, (E e m i ∥ c ). Time-resolved PL measurements revealed a decay lifetime of around 4.3 ns at 10 K for the dominant band-edge transition line. The present result together with the ability of p-type doping of hBN represents a major step towards the realization of hBN based practical devices.",

author = "S. Majety and Cao, {X. K.} and J. Li and R. Dahal and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The effort on the fundamental optical studies of hBN is supported by DOE (Grant No. FG02-09ER46552) and the effort of MOCVD growth of hBN is supported by DARPA-CMUVT program (Grant No. FA2386-10-1-4165 managed by Dr. John Albrecht). Jiang and Lin are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. The authors would also like to thank Dr. Ashok Sedhain for his help with the PL measurement system.",

year = "2012",

month = jul,

day = "30",

doi = "10.1063/1.4742194",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Band-edge transitions in hexagonal boron nitride epilayers

AU - Majety, S.

AU - Cao, X. K.

AU - Li, J.

AU - Dahal, R.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The effort on the fundamental optical studies of hBN is supported by DOE (Grant No. FG02-09ER46552) and the effort of MOCVD growth of hBN is supported by DARPA-CMUVT program (Grant No. FA2386-10-1-4165 managed by Dr. John Albrecht). Jiang and Lin are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. The authors would also like to thank Dr. Ashok Sedhain for his help with the PL measurement system.

PY - 2012/7/30

Y1 - 2012/7/30

N2 - Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E e m i c ) is about 1.7 times stronger than the component along the c-axis (E e m i ∥ c ). This is in contrast to AlN, in which the band-edge emission is known to be polarized along the c-axis, (E e m i ∥ c ). Time-resolved PL measurements revealed a decay lifetime of around 4.3 ns at 10 K for the dominant band-edge transition line. The present result together with the ability of p-type doping of hBN represents a major step towards the realization of hBN based practical devices.

AB - Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E e m i c ) is about 1.7 times stronger than the component along the c-axis (E e m i ∥ c ). This is in contrast to AlN, in which the band-edge emission is known to be polarized along the c-axis, (E e m i ∥ c ). Time-resolved PL measurements revealed a decay lifetime of around 4.3 ns at 10 K for the dominant band-edge transition line. The present result together with the ability of p-type doping of hBN represents a major step towards the realization of hBN based practical devices.

UR - http://www.scopus.com/inward/record.url?scp=84864675987&partnerID=8YFLogxK

U2 - 10.1063/1.4742194

DO - 10.1063/1.4742194

M3 - Article

AN - SCOPUS:84864675987

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051110

ER -

Band-edge transitions in hexagonal boron nitride epilayers

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