Band-edge photoluminescence of AlN epilayers

J. Li; K. B. Nam; M. L. Nakarmi; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1518558

Band-edge photoluminescence of AlN epilayers

J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

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Abstract

AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN.

Original language	English
Pages (from-to)	3365-3367
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	18
DOIs	https://doi.org/10.1063/1.1518558
State	Published - Oct 28 2002

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title = "Band-edge photoluminescence of AlN epilayers",

abstract = "AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN.",

author = "J. Li and Nam, {K. B.} and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2002",

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T1 - Band-edge photoluminescence of AlN epilayers

AU - Li, J.

AU - Nam, K. B.

AU - Nakarmi, M. L.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2002/10/28

Y1 - 2002/10/28

N2 - AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN.

AB - AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN.

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DO - 10.1063/1.1518558

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JF - Applied Physics Letters

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Band-edge photoluminescence of AlN epilayers

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