Band edge exciton states in AlN single crystals and epitaxial layers

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

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The band-edge excitonic properties of AlN are investigated using low-temperamre (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations.

Original languageEnglish
Pages (from-to)4334-4336
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - Nov 8 2004


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