TY - JOUR
T1 - Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions
AU - Hur, Jung H.
AU - Myles, Charles W.
AU - Gundersen, Martin A.
PY - 1990
Y1 - 1990
N2 - Avalanche breakdown in abrupt p-n AlGaAs/GaAs heterojunctions is invesigated, and the breakdown voltage, the maximum electric field, and the depletion layer width are calculated as functions of the doping densities, the temperature, and the AlAs mole fraction in AlGaAs. The model employed is an extension of Hauser's model of homojunction breakdown [Appl. Phys. Lett. 33, 351 (1978)], and it includes the effects of the band offsets at the interface.
AB - Avalanche breakdown in abrupt p-n AlGaAs/GaAs heterojunctions is invesigated, and the breakdown voltage, the maximum electric field, and the depletion layer width are calculated as functions of the doping densities, the temperature, and the AlAs mole fraction in AlGaAs. The model employed is an extension of Hauser's model of homojunction breakdown [Appl. Phys. Lett. 33, 351 (1978)], and it includes the effects of the band offsets at the interface.
UR - http://www.scopus.com/inward/record.url?scp=0343958889&partnerID=8YFLogxK
U2 - 10.1063/1.345085
DO - 10.1063/1.345085
M3 - Article
AN - SCOPUS:0343958889
SN - 0021-8979
VL - 67
SP - 6917
EP - 6923
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
ER -