Avalanche breakdown energy in silicon carbide junction field effect transistors

Miguel Hinojosa, Stephen Bayne, Victor Veliadis, Damian Urciuoli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages1025-1028
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period09/11/1109/16/11

Keywords

  • Avalanche breakdown
  • Energy extraction
  • JFET
  • PFN
  • Pulse forming network
  • SiC
  • Silicon carbide

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  • Cite this

    Hinojosa, M., Bayne, S., Veliadis, V., & Urciuoli, D. (2012). Avalanche breakdown energy in silicon carbide junction field effect transistors. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1025-1028). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1025