Avalanche breakdown energy in silicon carbide junction field effect transistors

Miguel Hinojosa; Stephen Bayne; Victor Veliadis; Damian Urciuoli

doi:10.4028/www.scientific.net/MSF.717-720.1025

Avalanche breakdown energy in silicon carbide junction field effect transistors

Miguel Hinojosa, Stephen Bayne, Victor Veliadis, Damian Urciuoli

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm² JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2011, ICSCRM 2011
Editors	Robert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
Publisher	Trans Tech Publications Ltd
Pages	1025-1028
Number of pages	4
ISBN (Print)	9783037854198
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.717-720.1025
State	Published - 2012
Event	14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States Duration: Sep 11 2011 → Sep 16 2011

Publication series

Name	Materials Science Forum
Volume	717-720
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country	United States
City	Cleveland, OH
Period	09/11/11 → 09/16/11

Keywords

Avalanche breakdown
Energy extraction
JFET
PFN
Pulse forming network
SiC
Silicon carbide

Access to Document

10.4028/www.scientific.net/MSF.717-720.1025

Link to publication in Scopus

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Hinojosa, M., Bayne, S., Veliadis, V., & Urciuoli, D. (2012). Avalanche breakdown energy in silicon carbide junction field effect transistors. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1025-1028). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1025

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abstract = "The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.",

keywords = "Avalanche breakdown, Energy extraction, JFET, PFN, Pulse forming network, SiC, Silicon carbide",

author = "Miguel Hinojosa and Stephen Bayne and Victor Veliadis and Damian Urciuoli",

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Hinojosa, M, Bayne, S, Veliadis, V & Urciuoli, D 2012, Avalanche breakdown energy in silicon carbide junction field effect transistors. in RP Devaty, M Dudley, TP Chow & PG Neudeck (eds), Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, vol. 717-720, Trans Tech Publications Ltd, pp. 1025-1028, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 09/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1025

Avalanche breakdown energy in silicon carbide junction field effect transistors. / Hinojosa, Miguel; Bayne, Stephen; Veliadis, Victor; Urciuoli, Damian.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. ed. / Robert P. Devaty; Michael Dudley; T. Paul Chow; Philip G. Neudeck. Trans Tech Publications Ltd, 2012. p. 1025-1028 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.

AB - The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.

KW - Avalanche breakdown

KW - Energy extraction

KW - JFET

KW - PFN

KW - Pulse forming network

KW - SiC

KW - Silicon carbide

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Hinojosa M, Bayne S, Veliadis V, Urciuoli D. Avalanche breakdown energy in silicon carbide junction field effect transistors. In Devaty RP, Dudley M, Chow TP, Neudeck PG, editors, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Trans Tech Publications Ltd. 2012. p. 1025-1028. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.1025