@inproceedings{ceb2f1a1819d4ebabf880eaa59a42432,
title = "Avalanche breakdown energy in silicon carbide junction field effect transistors",
abstract = "The energy dissipation capabilities of a 4H-SiC, 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional solid-state circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in reverse bias mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage, short-pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.",
keywords = "Avalanche breakdown, Energy extraction, JFET, PFN, Pulse forming network, SiC, Silicon carbide",
author = "Miguel Hinojosa and Stephen Bayne and Victor Veliadis and Damian Urciuoli",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1025",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1025--1028",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "null ; Conference date: 11-09-2011 Through 16-09-2011",
}