Avalanche breakdown characteristics of AlGaAs/GaAs p-n heterojunctions for pulsed power applications

J. H. Hur, C. W. Myles, M. A. Gundersen

Research output: Contribution to journalConference article

Abstract

Results of a theoretical analysis of avalanche breakdown in AlxGa1-xAs/GaAs heterojunctions are presented. All x values of AlxGa1-xAs in the heterojunctions were considered. The avalanche breakdown voltage was found to be maximum when the x of AlxGa1-xAs in heterojunctions was approximately 0.45. The maximum heterojunction breakdown voltage was approximately 400 V larger than that of a homojunction when donor and acceptor concentrations were 1014 cm-3. The results indicate that the use of a thyristor for pulsed power applications can improve the blocking capability of the device.

Original languageEnglish
Pages (from-to)421-426
Number of pages6
JournalIEEE Conference Record of Power Modulator Symposium
StatePublished - Jun 1990
Event1990 Nineteenth Power Modulator Symposium - San Diego, CA, USA
Duration: Jun 26 1990Jun 28 1990

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