Results of a theoretical analysis of avalanche breakdown in AlxGa1-xAs/GaAs heterojunctions are presented. All x values of AlxGa1-xAs in the heterojunctions were considered. The avalanche breakdown voltage was found to be maximum when the x of AlxGa1-xAs in heterojunctions was approximately 0.45. The maximum heterojunction breakdown voltage was approximately 400 V larger than that of a homojunction when donor and acceptor concentrations were 1014 cm-3. The results indicate that the use of a thyristor for pulsed power applications can improve the blocking capability of the device.
|Number of pages||6|
|Journal||IEEE Conference Record of Power Modulator Symposium|
|State||Published - Jun 1990|
|Event||1990 Nineteenth Power Modulator Symposium - San Diego, CA, USA|
Duration: Jun 26 1990 → Jun 28 1990