Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

Animesh R. Chowdhury, Richard Ness, Ravi P. Joshi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.

Original languageEnglish
Article number8423685
Pages (from-to)3922-3929
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume65
Issue number9
DOIs
StatePublished - Sep 2018

Keywords

  • Lock-on
  • modeling
  • persistent photoconductivity
  • photoconductive switch
  • pulsed power application
  • semi-insulating semiconductors

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