Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

Animesh R. Chowdhury; Richard Ness; Ravi P. Joshi

doi:10.1109/TED.2018.2856803

Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

Animesh R. Chowdhury, Richard Ness, Ravi P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.

Original language	English
Article number	8423685
Pages (from-to)	3922-3929
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	9
DOIs	https://doi.org/10.1109/TED.2018.2856803
State	Published - Sep 2018

Keywords

Lock-on
modeling
persistent photoconductivity
photoconductive switch
pulsed power application
semi-insulating semiconductors

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10.1109/TED.2018.2856803

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title = "Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation",

abstract = "The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.",

keywords = "Lock-on, modeling, persistent photoconductivity, photoconductive switch, pulsed power application, semi-insulating semiconductors",

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AU - Joshi, Ravi P.

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AB - The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.

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Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

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