Arrhenius analysis optical transitions in strained InGaAsP quantum wells

A. D. Lúcio; L. A. Cury; F. M. Matinaga; J. F. Sampaio; A. A. Bernussi; W. De Carvalho

doi:10.1063/1.370701

Arrhenius analysis optical transitions in strained InGaAsP quantum wells

A. D. Lúcio, L. A. Cury, F. M. Matinaga, J. F. Sampaio, A. A. Bernussi, W. De Carvalho

Electrical and Computer Engineering

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7 Scopus citations

Abstract

Low pressure metalorganic vapor phase epitaxy grown strained InGaAsP/InP single quantum wells were investigated using photoluminescence. The Arrhenius plot which is specially modified to fit the temperature dependence of the integrated photoluminescence intensity was analyzed to serve as a complementary technique in identifying different optical transitions in more complex photoluminescence spectra.

Original language	English
Pages (from-to)	537-542
Number of pages	6
Journal	Journal of Applied Physics
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.370701
State	Published - Jul 1999

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@article{a9d56a501f484330aceb041c6240db31,

title = "Arrhenius analysis optical transitions in strained InGaAsP quantum wells",

abstract = "Low pressure metalorganic vapor phase epitaxy grown strained InGaAsP/InP single quantum wells were investigated using photoluminescence. The Arrhenius plot which is specially modified to fit the temperature dependence of the integrated photoluminescence intensity was analyzed to serve as a complementary technique in identifying different optical transitions in more complex photoluminescence spectra.",

author = "L{\'u}cio, {A. D.} and Cury, {L. A.} and Matinaga, {F. M.} and Sampaio, {J. F.} and Bernussi, {A. A.} and {De Carvalho}, W.",

year = "1999",

month = jul,

doi = "10.1063/1.370701",

language = "English",

volume = "86",

pages = "537--542",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "1",

}

TY - JOUR

T1 - Arrhenius analysis optical transitions in strained InGaAsP quantum wells

AU - Lúcio, A. D.

AU - Cury, L. A.

AU - Matinaga, F. M.

AU - Sampaio, J. F.

AU - Bernussi, A. A.

AU - De Carvalho, W.

PY - 1999/7

Y1 - 1999/7

N2 - Low pressure metalorganic vapor phase epitaxy grown strained InGaAsP/InP single quantum wells were investigated using photoluminescence. The Arrhenius plot which is specially modified to fit the temperature dependence of the integrated photoluminescence intensity was analyzed to serve as a complementary technique in identifying different optical transitions in more complex photoluminescence spectra.

AB - Low pressure metalorganic vapor phase epitaxy grown strained InGaAsP/InP single quantum wells were investigated using photoluminescence. The Arrhenius plot which is specially modified to fit the temperature dependence of the integrated photoluminescence intensity was analyzed to serve as a complementary technique in identifying different optical transitions in more complex photoluminescence spectra.

UR - http://www.scopus.com/inward/record.url?scp=0032606415&partnerID=8YFLogxK

U2 - 10.1063/1.370701

DO - 10.1063/1.370701

M3 - Article

AN - SCOPUS:0032606415

SN - 0021-8979

VL - 86

SP - 537

EP - 542

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Arrhenius analysis optical transitions in strained InGaAsP quantum wells

Abstract

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