Arrhenius analysis optical transitions in strained InGaAsP quantum wells

A. D. Lúcio, L. A. Cury, F. M. Matinaga, J. F. Sampaio, A. A. Bernussi, W. De Carvalho

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Low pressure metalorganic vapor phase epitaxy grown strained InGaAsP/InP single quantum wells were investigated using photoluminescence. The Arrhenius plot which is specially modified to fit the temperature dependence of the integrated photoluminescence intensity was analyzed to serve as a complementary technique in identifying different optical transitions in more complex photoluminescence spectra.

Original languageEnglish
Pages (from-to)537-542
Number of pages6
JournalJournal of Applied Physics
Volume86
Issue number1
DOIs
StatePublished - Jul 1999

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