Anomalous variation of electrical transport property and amorphization in dense Alq3

Feng Ke, Qinglin Wang, Junkai Zhang, Ying Guo, Dayong Tan, Yan Li, Cailong Liu, Yonghao Han, Yanzhang Ma, Xiao Jia Chen, Bin Chen, Chunxiao Gao

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Herein, we report the intriguing electrical transport and structural properties of compressed Alq3, which is an extensively used electron transport material in OLEDs. The bulk resistance (Rb) of Alq3 increases with uploading pressure, but drops markedly when the uploading pressure is above 8.6 GPa. In contrast, the grain boundary resistance (Rgb) varies smoothly below 16.4 GPa. With further compression, both Rb and Rgb increase with the amorphization of Alq3. The pressure-induced amorphization is found to be reversible at a low density amorphous state, while it is irreversible at a higher density state. Interestingly, XRD measurements indicate no structural transition at ∼8.0 GPa. The variation of Rb is found to be synchronous with the blue-shift of the Al-oxine deformation mode, which rationalizes the anomalous changes of Rb. The Al-oxine interaction is believed to be also significant in the electrical transport properties of dense Alq3, which provides insight into the correlation between its structural changes and electrical transport properties.

Original languageEnglish
Pages (from-to)41359-41364
Number of pages6
JournalRSC Advances
Volume5
Issue number52
DOIs
StatePublished - Apr 23 2015

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