Anomalous variation of electrical transport property and amorphization in dense Alq3

Feng Ke; Qinglin Wang; Junkai Zhang; Ying Guo; Dayong Tan; Yan Li; Cailong Liu; Yonghao Han; Yanzhang Ma; Xiao Jia Chen; Bin Chen; Chunxiao Gao

doi:10.1039/c5ra01198a

Anomalous variation of electrical transport property and amorphization in dense Alq₃

Feng Ke, Qinglin Wang, Junkai Zhang, Ying Guo, Dayong Tan, Yan Li, Cailong Liu, Yonghao Han, Yanzhang Ma, Xiao Jia Chen, Bin Chen, Chunxiao Gao

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Herein, we report the intriguing electrical transport and structural properties of compressed Alq₃, which is an extensively used electron transport material in OLEDs. The bulk resistance (R_b) of Alq₃ increases with uploading pressure, but drops markedly when the uploading pressure is above 8.6 GPa. In contrast, the grain boundary resistance (R_gb) varies smoothly below 16.4 GPa. With further compression, both R_b and R_gb increase with the amorphization of Alq₃. The pressure-induced amorphization is found to be reversible at a low density amorphous state, while it is irreversible at a higher density state. Interestingly, XRD measurements indicate no structural transition at ∼8.0 GPa. The variation of R_b is found to be synchronous with the blue-shift of the Al-oxine deformation mode, which rationalizes the anomalous changes of R_b. The Al-oxine interaction is believed to be also significant in the electrical transport properties of dense Alq₃, which provides insight into the correlation between its structural changes and electrical transport properties.

Original language	English
Pages (from-to)	41359-41364
Number of pages	6
Journal	RSC Advances
Volume	5
Issue number	52
DOIs	https://doi.org/10.1039/c5ra01198a
State	Published - Apr 23 2015

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title = "Anomalous variation of electrical transport property and amorphization in dense Alq3",

abstract = "Herein, we report the intriguing electrical transport and structural properties of compressed Alq3, which is an extensively used electron transport material in OLEDs. The bulk resistance (Rb) of Alq3 increases with uploading pressure, but drops markedly when the uploading pressure is above 8.6 GPa. In contrast, the grain boundary resistance (Rgb) varies smoothly below 16.4 GPa. With further compression, both Rb and Rgb increase with the amorphization of Alq3. The pressure-induced amorphization is found to be reversible at a low density amorphous state, while it is irreversible at a higher density state. Interestingly, XRD measurements indicate no structural transition at ∼8.0 GPa. The variation of Rb is found to be synchronous with the blue-shift of the Al-oxine deformation mode, which rationalizes the anomalous changes of Rb. The Al-oxine interaction is believed to be also significant in the electrical transport properties of dense Alq3, which provides insight into the correlation between its structural changes and electrical transport properties.",

author = "Feng Ke and Qinglin Wang and Junkai Zhang and Ying Guo and Dayong Tan and Yan Li and Cailong Liu and Yonghao Han and Yanzhang Ma and Chen, {Xiao Jia} and Bin Chen and Chunxiao Gao",

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month = apr,

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doi = "10.1039/c5ra01198a",

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T1 - Anomalous variation of electrical transport property and amorphization in dense Alq3

AU - Ke, Feng

AU - Wang, Qinglin

AU - Zhang, Junkai

AU - Guo, Ying

AU - Tan, Dayong

AU - Li, Yan

AU - Liu, Cailong

AU - Han, Yonghao

AU - Ma, Yanzhang

AU - Chen, Xiao Jia

AU - Chen, Bin

AU - Gao, Chunxiao

PY - 2015/4/23

Y1 - 2015/4/23

N2 - Herein, we report the intriguing electrical transport and structural properties of compressed Alq3, which is an extensively used electron transport material in OLEDs. The bulk resistance (Rb) of Alq3 increases with uploading pressure, but drops markedly when the uploading pressure is above 8.6 GPa. In contrast, the grain boundary resistance (Rgb) varies smoothly below 16.4 GPa. With further compression, both Rb and Rgb increase with the amorphization of Alq3. The pressure-induced amorphization is found to be reversible at a low density amorphous state, while it is irreversible at a higher density state. Interestingly, XRD measurements indicate no structural transition at ∼8.0 GPa. The variation of Rb is found to be synchronous with the blue-shift of the Al-oxine deformation mode, which rationalizes the anomalous changes of Rb. The Al-oxine interaction is believed to be also significant in the electrical transport properties of dense Alq3, which provides insight into the correlation between its structural changes and electrical transport properties.

AB - Herein, we report the intriguing electrical transport and structural properties of compressed Alq3, which is an extensively used electron transport material in OLEDs. The bulk resistance (Rb) of Alq3 increases with uploading pressure, but drops markedly when the uploading pressure is above 8.6 GPa. In contrast, the grain boundary resistance (Rgb) varies smoothly below 16.4 GPa. With further compression, both Rb and Rgb increase with the amorphization of Alq3. The pressure-induced amorphization is found to be reversible at a low density amorphous state, while it is irreversible at a higher density state. Interestingly, XRD measurements indicate no structural transition at ∼8.0 GPa. The variation of Rb is found to be synchronous with the blue-shift of the Al-oxine deformation mode, which rationalizes the anomalous changes of Rb. The Al-oxine interaction is believed to be also significant in the electrical transport properties of dense Alq3, which provides insight into the correlation between its structural changes and electrical transport properties.

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U2 - 10.1039/c5ra01198a

DO - 10.1039/c5ra01198a

M3 - Article

SN - 2046-2069

VL - 5

SP - 41359

EP - 41364

JO - RSC Advances

JF - RSC Advances

IS - 52

ER -

Anomalous variation of electrical transport property and amorphization in dense Alq₃

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