Analysis on repetitive pulsed overcurrent operation of GaN power transistors

William B. Ray, Matthew Kim, Argenis Bilbao, James A. Schrock, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.

Original languageEnglish
Title of host publicationWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages353-356
Number of pages4
ISBN (Electronic)9781509015764
DOIs
StatePublished - Dec 27 2016
Event4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 - Fayetteville, United States
Duration: Nov 7 2016Nov 9 2016

Publication series

NameWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications

Conference

Conference4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016
Country/TerritoryUnited States
CityFayetteville
Period11/7/1611/9/16

Keywords

  • GaN
  • HEMT
  • gallium
  • nitride
  • pulsed power
  • reliability testing

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