Analysis on repetitive pulsed overcurrent operation of GaN power transistors

William B. Ray; Matthew Kim; Argenis Bilbao; James A. Schrock; Stephen B. Bayne

doi:10.1109/WiPDA.2016.7799967

Analysis on repetitive pulsed overcurrent operation of GaN power transistors

William B. Ray, Matthew Kim, Argenis Bilbao, James A. Schrock, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.

Original language	English
Title of host publication	WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	353-356
Number of pages	4
ISBN (Electronic)	9781509015764
DOIs	https://doi.org/10.1109/WiPDA.2016.7799967
State	Published - Dec 27 2016
Event	4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 - Fayetteville, United States Duration: Nov 7 2016 → Nov 9 2016

Publication series

Name	WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications

Conference

Conference	4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016
Country	United States
City	Fayetteville
Period	11/7/16 → 11/9/16

Keywords

GaN
HEMT
gallium
nitride
pulsed power
reliability testing

Access to Document

10.1109/WiPDA.2016.7799967

Link to publication in Scopus

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Ray, W. B., Kim, M., Bilbao, A., Schrock, J. A., & Bayne, S. B. (2016). Analysis on repetitive pulsed overcurrent operation of GaN power transistors. In WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 353-356). [7799967] (WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2016.7799967

Ray, William B. ; Kim, Matthew ; Bilbao, Argenis ; Schrock, James A. ; Bayne, Stephen B. / Analysis on repetitive pulsed overcurrent operation of GaN power transistors. WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 353-356 (WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications).

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title = "Analysis on repetitive pulsed overcurrent operation of GaN power transistors",

abstract = "Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.",

keywords = "GaN, HEMT, gallium, nitride, pulsed power, reliability testing",

author = "Ray, {William B.} and Matthew Kim and Argenis Bilbao and Schrock, {James A.} and Bayne, {Stephen B.}",

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doi = "10.1109/WiPDA.2016.7799967",

language = "English",

series = "WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications",

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Ray, WB, Kim, M, Bilbao, A, Schrock, JA & Bayne, SB 2016, Analysis on repetitive pulsed overcurrent operation of GaN power transistors. in WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications., 7799967, WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, Institute of Electrical and Electronics Engineers Inc., pp. 353-356, 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016, Fayetteville, United States, 11/7/16. https://doi.org/10.1109/WiPDA.2016.7799967

Analysis on repetitive pulsed overcurrent operation of GaN power transistors. / Ray, William B.; Kim, Matthew; Bilbao, Argenis; Schrock, James A.; Bayne, Stephen B.

WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications. Institute of Electrical and Electronics Engineers Inc., 2016. p. 353-356 7799967 (WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis on repetitive pulsed overcurrent operation of GaN power transistors

AU - Ray, William B.

AU - Kim, Matthew

AU - Bilbao, Argenis

AU - Schrock, James A.

AU - Bayne, Stephen B.

PY - 2016/12/27

Y1 - 2016/12/27

N2 - Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.

AB - Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.

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KW - gallium

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Ray WB, Kim M, Bilbao A, Schrock JA, Bayne SB. Analysis on repetitive pulsed overcurrent operation of GaN power transistors. In WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications. Institute of Electrical and Electronics Engineers Inc. 2016. p. 353-356. 7799967. (WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications). https://doi.org/10.1109/WiPDA.2016.7799967