Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.