Analysis on repetitive pulsed overcurrent operation of GaN power transistors

M. Kim, K. R. Popp, C. Tchoupe-Nono, W. B. Ray, A. V. Bilbao, J. A. Schrock, S. B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are a new technology that is of great interest in pulsed power and power electronics application due to the demonstrated capabilities of Silicon Carbide (SiC) transistors. As there are further advances in development of GaN power semiconductors, an interest in the evaluation of repetitive pulsed overcurrent operations that can happen in power electronic applications are of demand due to the devices being new. The device tested is a GaN HEMT GS61008P rated for 100 V and 90 A manufactured by GaN Systems. This device was evaluated in a pulsed ringdown test bed using peak currents up to 265 A (almost 3x the maximum continuous current) at frequencies over 75 Hz. Measurements of the device's electrical characteristics such as the forward I-V curve, transconductance, and voltage breakdown were performed throughout testing which demonstrated no significant degradation. Along with those measurements, the device's switching energy as a function of time was recorded. The data that was gathered based on these measurements and their results show the robustness of the GaN HEMT device and their ability to handle repeated transient overcurrent operations that is normally common in many power semiconductor device applications.

Original languageEnglish
Title of host publication2017 IEEE 21st International Conference on Pulsed Power, PPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781509057481
DOIs
StatePublished - Feb 13 2018
Event21st IEEE International Conference on Pulsed Power, PPC 2017 - Brighton, United Kingdom
Duration: Jun 18 2017Jun 22 2017

Publication series

NameIEEE International Pulsed Power Conference
Volume2017-June
ISSN (Print)2158-4915
ISSN (Electronic)2158-4923

Conference

Conference21st IEEE International Conference on Pulsed Power, PPC 2017
CountryUnited Kingdom
CityBrighton
Period06/18/1706/22/17

Keywords

  • Gallium nitride
  • Power electronics
  • Pulsed power

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