Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

R. P. Joshi; P. G. Neudeck; C. Fazi

doi:10.1063/1.373651

Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

R. P. Joshi, P. G. Neudeck, C. Fazi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.

Original language	English
Pages (from-to)	265-269
Number of pages	5
Journal	Journal of Applied Physics
Volume	88
Issue number	1
DOIs	https://doi.org/10.1063/1.373651
State	Published - Jul 2000

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title = "Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications",

abstract = "The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.",

author = "Joshi, {R. P.} and Neudeck, {P. G.} and C. Fazi",

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N2 - The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.

AB - The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.

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