Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

R. P. Joshi, P. G. Neudeck, C. Fazi

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number1
DOIs
StatePublished - Jul 2000

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