TY - GEN
T1 - Analysis of SiC super junction transistors during pulsed operation
AU - Lawson, K.
AU - Bayne, S.
PY - 2011
Y1 - 2011
N2 - Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.
AB - Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.
UR - http://www.scopus.com/inward/record.url?scp=84861393900&partnerID=8YFLogxK
U2 - 10.1109/PPC.2011.6191513
DO - 10.1109/PPC.2011.6191513
M3 - Conference contribution
AN - SCOPUS:84861393900
SN - 9781457706295
T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference
SP - 791
EP - 793
BT - IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Y2 - 19 June 2011 through 23 June 2011
ER -