Analysis of SiC super junction transistors during pulsed operation

K. Lawson; S. Bayne

doi:10.1109/PPC.2011.6191513

Analysis of SiC super junction transistors during pulsed operation

K. Lawson, S. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.

Original language	English
Title of host publication	IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Subtitle of host publication	The 18th IEEE International Pulsed Power Conference
Pages	791-793
Number of pages	3
DOIs	https://doi.org/10.1109/PPC.2011.6191513
State	Published - 2011
Event	18th IEEE International Pulsed Power Conference, PPC 2011 - Chicago, IL, United States Duration: Jun 19 2011 → Jun 23 2011

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference	18th IEEE International Pulsed Power Conference, PPC 2011
Country	United States
City	Chicago, IL
Period	06/19/11 → 06/23/11

Access to Document

10.1109/PPC.2011.6191513

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@inproceedings{7caeb07d94834882a869c6f54ab8845b,

title = "Analysis of SiC super junction transistors during pulsed operation",

abstract = "Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.",

author = "K. Lawson and S. Bayne",

year = "2011",

doi = "10.1109/PPC.2011.6191513",

language = "English",

isbn = "9781457706295",

series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

pages = "791--793",

booktitle = "IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011",

}

Lawson, K & Bayne, S 2011, Analysis of SiC super junction transistors during pulsed operation. in IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference., 6191513, Digest of Technical Papers-IEEE International Pulsed Power Conference, pp. 791-793, 18th IEEE International Pulsed Power Conference, PPC 2011, Chicago, IL, United States, 06/19/11. https://doi.org/10.1109/PPC.2011.6191513

Analysis of SiC super junction transistors during pulsed operation. / Lawson, K.; Bayne, S.

IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference. 2011. p. 791-793 6191513 (Digest of Technical Papers-IEEE International Pulsed Power Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of SiC super junction transistors during pulsed operation

AU - Lawson, K.

AU - Bayne, S.

PY - 2011

Y1 - 2011

N2 - Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.

AB - Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.

UR - http://www.scopus.com/inward/record.url?scp=84861393900&partnerID=8YFLogxK

U2 - 10.1109/PPC.2011.6191513

DO - 10.1109/PPC.2011.6191513

M3 - Conference contribution

AN - SCOPUS:84861393900

SN - 9781457706295

T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference

SP - 791

EP - 793

BT - IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011

Y2 - 19 June 2011 through 23 June 2011

ER -