Analysis of SiC super junction transistors during pulsed operation

K. Lawson, S. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.

Original languageEnglish
Title of host publicationIEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Subtitle of host publicationThe 18th IEEE International Pulsed Power Conference
Pages791-793
Number of pages3
DOIs
StatePublished - 2011
Event18th IEEE International Pulsed Power Conference, PPC 2011 - Chicago, IL, United States
Duration: Jun 19 2011Jun 23 2011

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference18th IEEE International Pulsed Power Conference, PPC 2011
Country/TerritoryUnited States
CityChicago, IL
Period06/19/1106/23/11

Fingerprint

Dive into the research topics of 'Analysis of SiC super junction transistors during pulsed operation'. Together they form a unique fingerprint.

Cite this