Abstract
Intense electron emission from cathodes that provide very high current densities (several kA/cm2) are necessary for a various applications such as high power microwaves, free electron lasers, in plasma physics, and for surface modifications and material processing. The presence of an ion near the cathode emitting surface can lower the barrier, which increases Schottky emission. In addition, width of the barrier for electron tunneling is reduced that can enhance the output currents. Finally, due to larger currents, one can expect localized heating at the cathode tips1 that would lead to phonon-assisted contribution to the emission current.
In this contribution, we present an analysis of changes in the tunneling currents due to reduction in barrier width because of the presence of an ion in close proximity to the emitting cathode. Changes in the tunneling probability are evaluated due to reductions in the barrier thickness. Analysis for increases in temperature based on a Boltzmann an
| Original language | English |
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| State | Published - Dec 2015 |