Analysis of nonselective plasma etching of AlGaN by C F4 Ar Cl2

V. Kuryatkov, B. Borisov, J. Saxena, S. A. Nikishin, H. Temkin, S. Patibandla, L. Menon, M. Holtz

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Abstract

We report the nonselective plasma etching of epitaxial GaN:Mg, Al0.63 Ga0.37 N, and AlN Al0.08 Ga0.92 N short-period superlattices with various doping properties. Etching is performed using mixed C F4 Ar feed gases in a combined inductively coupled plasma and reactive-ion etching chamber. A uniform etch rate of ~23 nmmin is obtained for each of the compositions studied under identical conditions. This nonselective etching is also found to preserve the surface uniformity studied by atomic force microscopy and quantified using surface roughness and lateral correlation length. By adding Cl2 gas, etch rates are increased to 230-250 nmmin without degrading the surface properties.

Original languageEnglish
Article number073302
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
StatePublished - Apr 1 2005

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    Kuryatkov, V., Borisov, B., Saxena, J., Nikishin, S. A., Temkin, H., Patibandla, S., Menon, L., & Holtz, M. (2005). Analysis of nonselective plasma etching of AlGaN by C F4 Ar Cl2. Journal of Applied Physics, 97(7), [073302]. https://doi.org/10.1063/1.1866490