ANALYSIS OF MASS TRANSPORT DURING ELECTROLIQUID EPITAXY OF GALLIUM ARSENIDE.

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Abstract

Thermal processes are analyzed during electroliquid epitaxy in crystal-growing cells in which the volume containing the solution and melt is bounded or semibounded. It is shown experimentally that the measured temperatures of the crystallization front in semibounded growth cells depends nonlinearly on the electric current density. The differential mobility and mutual diffusion coefficient for arsenic in a saturated gallium solution are found by examining how the growth rate depends on temperature for T equals 650-900 degree C.

Original languageEnglish
Pages (from-to)334-338
Number of pages5
JournalSoviet physics. Technical physics
Volume28
Issue number3
StatePublished - 1983

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