Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H-SiC for photoconductive switch applications

V. Meyers; A. R. Chowdhury; D. Mauch; James Dickens; Andreas Neuber; Ravindra Joshi

Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H-SiC for photoconductive switch applications

V. Meyers, A. R. Chowdhury, D. Mauch, James Dickens, Andreas Neuber, Ravindra Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

© 2017 IOP Publishing Ltd. We report on the intensity-dependent behavior of the absorption coefficient (α) in semi-insulating 4H-SiC material. Data from as-received samples show a monotonic decrease in α with incident energy density, with a pronounced change in slope at around 10 mJ cm -2 . Annealed samples, on the other hand, exhibit an experimental trend of increasing α with intensity. Qualitative explanation of the observed behavior is presented that probes the possible role of spontaneous and stimulated emission for as-received samples. With annealing, trap related recombination is strongly reduced leading to higher carrier densities and increased free-carrier absorption with incident intensity. The role of band-filling and permittivity changes are shown to be inconsequential, while changes in internal fields could contribute to decreases in absorption.

Original language	English
Journal	Journal of Physics D: Applied Physics
State	Published - Mar 2 2017

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title = "Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H-SiC for photoconductive switch applications",

abstract = "{\textcopyright} 2017 IOP Publishing Ltd. We report on the intensity-dependent behavior of the absorption coefficient (α) in semi-insulating 4H-SiC material. Data from as-received samples show a monotonic decrease in α with incident energy density, with a pronounced change in slope at around 10 mJ cm -2 . Annealed samples, on the other hand, exhibit an experimental trend of increasing α with intensity. Qualitative explanation of the observed behavior is presented that probes the possible role of spontaneous and stimulated emission for as-received samples. With annealing, trap related recombination is strongly reduced leading to higher carrier densities and increased free-carrier absorption with incident intensity. The role of band-filling and permittivity changes are shown to be inconsequential, while changes in internal fields could contribute to decreases in absorption.",

author = "V. Meyers and Chowdhury, {A. R.} and D. Mauch and James Dickens and Andreas Neuber and Ravindra Joshi",

year = "2017",

month = mar,

day = "2",

language = "English",

journal = "Journal of Physics D: Applied Physics",

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TY - JOUR

T1 - Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H-SiC for photoconductive switch applications

AU - Meyers, V.

AU - Chowdhury, A. R.

AU - Mauch, D.

AU - Dickens, James

AU - Neuber, Andreas

AU - Joshi, Ravindra

PY - 2017/3/2

Y1 - 2017/3/2

N2 - © 2017 IOP Publishing Ltd. We report on the intensity-dependent behavior of the absorption coefficient (α) in semi-insulating 4H-SiC material. Data from as-received samples show a monotonic decrease in α with incident energy density, with a pronounced change in slope at around 10 mJ cm -2 . Annealed samples, on the other hand, exhibit an experimental trend of increasing α with intensity. Qualitative explanation of the observed behavior is presented that probes the possible role of spontaneous and stimulated emission for as-received samples. With annealing, trap related recombination is strongly reduced leading to higher carrier densities and increased free-carrier absorption with incident intensity. The role of band-filling and permittivity changes are shown to be inconsequential, while changes in internal fields could contribute to decreases in absorption.

AB - © 2017 IOP Publishing Ltd. We report on the intensity-dependent behavior of the absorption coefficient (α) in semi-insulating 4H-SiC material. Data from as-received samples show a monotonic decrease in α with incident energy density, with a pronounced change in slope at around 10 mJ cm -2 . Annealed samples, on the other hand, exhibit an experimental trend of increasing α with intensity. Qualitative explanation of the observed behavior is presented that probes the possible role of spontaneous and stimulated emission for as-received samples. With annealing, trap related recombination is strongly reduced leading to higher carrier densities and increased free-carrier absorption with incident intensity. The role of band-filling and permittivity changes are shown to be inconsequential, while changes in internal fields could contribute to decreases in absorption.

M3 - Article

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

ER -