Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H-SiC for photoconductive switch applications

V. Meyers, A. R. Chowdhury, D. Mauch, J. C. Dickens, A. A. Neuber, R. P. Joshi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report on the intensity-dependent behavior of the absorption coefficient (α) in semi-insulating 4H-SiC material. Data from as-received samples show a monotonic decrease in α with incident energy density, with a pronounced change in slope at around 10 mJ cm-2. Annealed samples, on the other hand, exhibit an experimental trend of increasing α with intensity. Qualitative explanation of the observed behavior is presented that probes the possible role of spontaneous and stimulated emission for as-received samples. With annealing, trap related recombination is strongly reduced leading to higher carrier densities and increased free-carrier absorption with incident intensity. The role of band-filling and permittivity changes are shown to be inconsequential, while changes in internal fields could contribute to decreases in absorption.

Original languageEnglish
Article number135104
JournalJournal of Physics D: Applied Physics
Volume50
Issue number13
DOIs
StatePublished - Mar 2 2017

Keywords

  • SiC
  • absorption
  • intensity dependence
  • photoconductive switch

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