Analysis of GaN power MOSFET exporsure to pulsed overcurrents

William B. Ray, James A. Schrock, Argenis V. Bilbao, Mitchell Kelley, Shelby Lacouture, Emily Hirsch, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

The advancement of wide bandgap semiconductor materials has led to the development of Gallium Nitride (GaN) power semiconductor devices, specifically GaN Power MOSFETs. GaN devices have improved characteristics in carrier mobility and on-state resistance compared to Silicon solid state switches. With the development of these new power semiconductor devices a need was established to understand the behavior of the devices switching performance under stress, with regards to situations in pulsing circuits. Through the examination of the switching characteristics of GaN devices, the results can be used for the improvement of advanced pulsing circuit design with GaN solid state switches. In this paper the authors develop a test bed to expose the GaN Power MOSFETs to single and repetitive pulsed overcurrents. The test bed was developed using a Pulse Ring Down board in a radially symmetric configuration to minimize the total equivalent inductance and resistance. The test bed switches the GaN MOSFET with low impedance between the DC bus and ground to induce the stress the MOSFET experiences during pulsed overcurrents. The DC characteristics were measured between switching sets to reveal characteristic signs of potential degradation and failure modes due to pulsed overcurrents. The single and repetitive pulse switching characteristics are captured, analyzed, and shown.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Degradation
  • Gallium nitride
  • HEMTs
  • Logic gates
  • Resistance
  • Switches
  • Transconductance

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