Abstract
The electron mobility in GaN high electron mobility transistors was investigated. Scattering due to edge dislocation strains was also examined by Monte Carlo study. It was found that the decrease in electron mobility with density was highest at the lower 77K temperature.
Original language | English |
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Pages (from-to) | 10046-10052 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 12 |
DOIs | |
State | Published - Jun 15 2003 |