Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors

R. P. Joshi, S. Viswanadha, B. Jogai, P. Shah, R. D. Del Rosario

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The electron mobility in GaN high electron mobility transistors was investigated. Scattering due to edge dislocation strains was also examined by Monte Carlo study. It was found that the decrease in electron mobility with density was highest at the lower 77K temperature.

Original languageEnglish
Pages (from-to)10046-10052
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - Jun 15 2003

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