A new deep level transient spectroscopy (DLTS) analysis method is presented. This method operates in the limit of large emission times which leads to a major simplification of standard DLTS calculations. This analysis can be applied as data is collected, and yields defect energy levels completely independent of the thermally activated cross section. This modification is especially useful in separating closely spaced energy levels not resolvable by standard analysis methods. Specifically, in the modified technique the shallower energy level is reliably determined. As an example, the new technique is applied to the energy level splitting of EL2 in n-type gallium arsenide induced by uniaxial stress. Our preliminary results for stress applied along <100≳ indicates that C3v and Td symmetries are incompatible with this defect.