Analysis of Commercial GaN HEMTs in Overcurrent Operation

Matthew Kim, Jose A. Rodriguez, William B. Ray, Stephen B. Bayne, Heather O'Brien, Aderinto Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are an ideal option in applications of power electronics due to the wide-bandgap properties of the material. High electron mobility is gained through the device's unique channel structure. This research investigates whether state-of-The-Art GaN HEMT semiconductors are reliable in a long-Term operation in high power switch-mode conditions. Information on overcurrent capability about GaN HEMTs is not well established, thus a demand to investigate the devices exists. The GaN HEMT GS66508P from GaN Systems, was tested in pulsed overcurrent operations to establish the performance and to observe any operational changes after the experiment. The device is rated at 650 V and 30 A continuous. The goal of this research is to see if the device characteristics change after overcurrent pulsing and to analyze the device degradation that occurs in higher energy density.

Original languageEnglish
Title of host publication2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-351
Number of pages3
ISBN (Electronic)9781538654538
DOIs
StatePublished - Jun 2018
Event2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 - Jackson, United States
Duration: Jun 3 2018Jun 7 2018

Publication series

Name2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018

Conference

Conference2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
CountryUnited States
CityJackson
Period06/3/1806/7/18

Keywords

  • GaN
  • HEMT
  • SiC
  • gallium nitride
  • high electronic mobility transistor
  • overcurrent operations
  • silicon carbide
  • wide-bandgap semiconductors

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