@inproceedings{da83a5bedd5c4493909ba2ea1a395b79,
title = "Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions",
abstract = "Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.",
keywords = "Charge carrier lifetime, Conductivity, Numerical models, PIN photodiodes, Semiconductor process modeling, Silicon carbide, Temperature dependence",
author = "Ogunniyi, {Aderinto A.} and O'Brien, {Heather K.} and Miguel Hinojosa and Lin Cheng and Scozzie, {Charles J.} and Pushpakaran, {Bejoy N.} and Shelby Lacouture and Bayne, {Stephen B.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; null ; Conference date: 31-05-2015 Through 04-06-2015",
year = "2015",
month = oct,
day = "12",
doi = "10.1109/PPC.2015.7296946",
language = "English",
series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE Pulsed Power Conference, PPC 2015",
}