Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

Aderinto A. Ogunniyi; Heather K. O'Brien; Miguel Hinojosa; Lin Cheng; Charles J. Scozzie; Bejoy N. Pushpakaran; Shelby Lacouture; Stephen B. Bayne

doi:10.1109/PPC.2015.7296946

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

Aderinto A. Ogunniyi, Heather K. O'Brien, Miguel Hinojosa, Lin Cheng, Charles J. Scozzie, Bejoy N. Pushpakaran, Shelby Lacouture, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.

Original language	English
Title of host publication	2015 IEEE Pulsed Power Conference, PPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984039
DOIs	https://doi.org/10.1109/PPC.2015.7296946
State	Published - Oct 12 2015
Event	IEEE Pulsed Power Conference, PPC 2015 - Austin, United States Duration: May 31 2015 → Jun 4 2015

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference
Volume	2015-October

Conference

Conference	IEEE Pulsed Power Conference, PPC 2015
Country	United States
City	Austin
Period	05/31/15 → 06/4/15

Keywords

Charge carrier lifetime
Conductivity
Numerical models
PIN photodiodes
Semiconductor process modeling
Silicon carbide
Temperature dependence

Access to Document

10.1109/PPC.2015.7296946

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Ogunniyi, A. A., O'Brien, H. K., Hinojosa, M., Cheng, L., Scozzie, C. J., Pushpakaran, B. N., Lacouture, S., & Bayne, S. B. (2015). Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions. In 2015 IEEE Pulsed Power Conference, PPC 2015 [7296946] (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPC.2015.7296946

Ogunniyi, Aderinto A. ; O'Brien, Heather K. ; Hinojosa, Miguel ; Cheng, Lin ; Scozzie, Charles J. ; Pushpakaran, Bejoy N. ; Lacouture, Shelby ; Bayne, Stephen B. / Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions. 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Digest of Technical Papers-IEEE International Pulsed Power Conference).

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title = "Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions",

abstract = "Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.",

keywords = "Charge carrier lifetime, Conductivity, Numerical models, PIN photodiodes, Semiconductor process modeling, Silicon carbide, Temperature dependence",

author = "Ogunniyi, {Aderinto A.} and O'Brien, {Heather K.} and Miguel Hinojosa and Lin Cheng and Scozzie, {Charles J.} and Pushpakaran, {Bejoy N.} and Shelby Lacouture and Bayne, {Stephen B.}",

year = "2015",

month = oct,

day = "12",

doi = "10.1109/PPC.2015.7296946",

language = "English",

series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE Pulsed Power Conference, PPC 2015",

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Ogunniyi, AA, O'Brien, HK, Hinojosa, M, Cheng, L, Scozzie, CJ, Pushpakaran, BN, Lacouture, S & Bayne, SB 2015, Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions. in 2015 IEEE Pulsed Power Conference, PPC 2015., 7296946, Digest of Technical Papers-IEEE International Pulsed Power Conference, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., IEEE Pulsed Power Conference, PPC 2015, Austin, United States, 05/31/15. https://doi.org/10.1109/PPC.2015.7296946

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions. / Ogunniyi, Aderinto A.; O'Brien, Heather K.; Hinojosa, Miguel; Cheng, Lin; Scozzie, Charles J.; Pushpakaran, Bejoy N.; Lacouture, Shelby; Bayne, Stephen B.

2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7296946 (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

AU - Ogunniyi, Aderinto A.

AU - O'Brien, Heather K.

AU - Hinojosa, Miguel

AU - Cheng, Lin

AU - Scozzie, Charles J.

AU - Pushpakaran, Bejoy N.

AU - Lacouture, Shelby

AU - Bayne, Stephen B.

PY - 2015/10/12

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N2 - Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.

AB - Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.

KW - Charge carrier lifetime

KW - Conductivity

KW - Numerical models

KW - PIN photodiodes

KW - Semiconductor process modeling

KW - Silicon carbide

KW - Temperature dependence

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Ogunniyi AA, O'Brien HK, Hinojosa M, Cheng L, Scozzie CJ, Pushpakaran BN et al. Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions. In 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7296946. (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2015.7296946