Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

Aderinto A. Ogunniyi, Heather K. O'Brien, Miguel Hinojosa, Lin Cheng, Charles J. Scozzie, Bejoy N. Pushpakaran, Shelby Lacouture, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Charge carrier lifetime
  • Conductivity
  • Numerical models
  • PIN photodiodes
  • Semiconductor process modeling
  • Silicon carbide
  • Temperature dependence

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