Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

Argenis V. Bilbao, James A. Schrock, William B. Ray, Mitchell D. Kelley, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

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Engineering & Materials Science