Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

Argenis V. Bilbao, James A. Schrock, William B. Ray, Mitchell D. Kelley, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices1. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible2. A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
Country/TerritoryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Decision support systems
  • Delays
  • Logic gates
  • Resistors
  • Switches
  • Temperature distribution

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