Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

Argenis V. Bilbao; James A. Schrock; William B. Ray; Mitchell D. Kelley; Stephen B. Bayne

doi:10.1109/PPC.2015.7296953

Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

Argenis V. Bilbao, James A. Schrock, William B. Ray, Mitchell D. Kelley, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices¹. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible². A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.

Original language	English
Title of host publication	2015 IEEE Pulsed Power Conference, PPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984039
DOIs	https://doi.org/10.1109/PPC.2015.7296953
State	Published - Oct 12 2015
Event	IEEE Pulsed Power Conference, PPC 2015 - Austin, United States Duration: May 31 2015 → Jun 4 2015

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference
Volume	2015-October

Conference

Conference	IEEE Pulsed Power Conference, PPC 2015
Country	United States
City	Austin
Period	05/31/15 → 06/4/15

Keywords

Decision support systems
Delays
Logic gates
Resistors
Switches
Temperature distribution

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Bilbao, A. V., Schrock, J. A., Ray, W. B., Kelley, M. D., & Bayne, S. B. (2015). Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests. In 2015 IEEE Pulsed Power Conference, PPC 2015 [7296953] (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPC.2015.7296953

Bilbao, Argenis V. ; Schrock, James A. ; Ray, William B. ; Kelley, Mitchell D. ; Bayne, Stephen B. / Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests. 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Digest of Technical Papers-IEEE International Pulsed Power Conference).

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title = "Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests",

abstract = "The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices1. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible2. A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.",

keywords = "Decision support systems, Delays, Logic gates, Resistors, Switches, Temperature distribution",

author = "Bilbao, {Argenis V.} and Schrock, {James A.} and Ray, {William B.} and Kelley, {Mitchell D.} and Bayne, {Stephen B.}",

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Bilbao, AV, Schrock, JA, Ray, WB, Kelley, MD & Bayne, SB 2015, Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests. in 2015 IEEE Pulsed Power Conference, PPC 2015., 7296953, Digest of Technical Papers-IEEE International Pulsed Power Conference, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., IEEE Pulsed Power Conference, PPC 2015, Austin, United States, 05/31/15. https://doi.org/10.1109/PPC.2015.7296953

Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests. / Bilbao, Argenis V.; Schrock, James A.; Ray, William B.; Kelley, Mitchell D.; Bayne, Stephen B.

2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7296953 (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

AU - Bilbao, Argenis V.

AU - Schrock, James A.

AU - Ray, William B.

AU - Kelley, Mitchell D.

AU - Bayne, Stephen B.

PY - 2015/10/12

Y1 - 2015/10/12

N2 - The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices1. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible2. A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.

AB - The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices1. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible2. A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.

KW - Decision support systems

KW - Delays

KW - Logic gates

KW - Resistors

KW - Switches

KW - Temperature distribution

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Bilbao AV, Schrock JA, Ray WB, Kelley MD, Bayne SB. Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests. In 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7296953. (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2015.7296953