An omni-directional comparison between common-emitter and common-base SiGe HBTs

Zhenqiang Ma; Ningyue Jiang; Guogong Wang; Hui Li; Guoxuan Qin; Donald Y.C. Lie

doi:10.1109/ICSICT.2006.306128

An omni-directional comparison between common-emitter and common-base SiGe HBTs

Zhenqiang Ma, Ningyue Jiang, Guogong Wang, Hui Li, Guoxuan Qin, Donald Y.C. Lie

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The unique device structures of SiGe HBTs, in comparison to Si bipolar (homo)junction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	166-169
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306128
State	Published - Jan 1 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Oct 23 2006 → Oct 26 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/23/06 → 10/26/06

Access to Document

10.1109/ICSICT.2006.306128

Cite this

Ma, Z., Jiang, N., Wang, G., Li, H., Qin, G., & Lie, D. Y. C. (2006). An omni-directional comparison between common-emitter and common-base SiGe HBTs. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 166-169). Article 4098050 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306128

Ma, Zhenqiang ; Jiang, Ningyue ; Wang, Guogong et al. / An omni-directional comparison between common-emitter and common-base SiGe HBTs. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 166-169 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{8a81281025c845b2bf7a697e6110a1f7,

title = "An omni-directional comparison between common-emitter and common-base SiGe HBTs",

abstract = "The unique device structures of SiGe HBTs, in comparison to Si bipolar (homo)junction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications.",

author = "Zhenqiang Ma and Ningyue Jiang and Guogong Wang and Hui Li and Guoxuan Qin and Lie, {Donald Y.C.}",

year = "2006",

month = jan,

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doi = "10.1109/ICSICT.2006.306128",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "166--169",

booktitle = "ICSICT-2006",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Ma, Z, Jiang, N, Wang, G, Li, H, Qin, G & Lie, DYC 2006, An omni-directional comparison between common-emitter and common-base SiGe HBTs. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098050, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 166-169, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306128

An omni-directional comparison between common-emitter and common-base SiGe HBTs. / Ma, Zhenqiang; Jiang, Ningyue; Wang, Guogong et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 166-169 4098050 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The unique device structures of SiGe HBTs, in comparison to Si bipolar (homo)junction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications.

AB - The unique device structures of SiGe HBTs, in comparison to Si bipolar (homo)junction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications.

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Ma Z, Jiang N, Wang G, Li H, Qin G, Lie DYC. An omni-directional comparison between common-emitter and common-base SiGe HBTs. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 166-169. 4098050. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306128

An omni-directional comparison between common-emitter and common-base SiGe HBTs

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