TY - GEN
T1 - An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI
AU - Sweeney, Clint
AU - Mayeda, Jill
AU - Lie, Donald Y.C.
AU - Lopez, Jerry
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.
AB - The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.
KW - 5G
KW - Adaptive Biasing
KW - Broadband Power Amplifier (PA)
KW - CMOS SOI
KW - Millimeter-Wave (mm-Wave)
KW - Power Backoff
UR - http://www.scopus.com/inward/record.url?scp=85138485152&partnerID=8YFLogxK
U2 - 10.1109/WMCS55582.2022.9866339
DO - 10.1109/WMCS55582.2022.9866339
M3 - Conference contribution
AN - SCOPUS:85138485152
T3 - Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022
BT - Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022
Y2 - 19 April 2022 through 20 April 2022
ER -