An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI

Clint Sweeney; Jill Mayeda; Donald Y.C. Lie; Jerry Lopez

doi:10.1109/WMCS55582.2022.9866339

An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI

Clint Sweeney, Jill Mayeda, Donald Y.C. Lie, Jerry Lopez

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.

Original language	English
Title of host publication	Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665486095
DOIs	https://doi.org/10.1109/WMCS55582.2022.9866339
State	Published - 2022
Event	2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022 - Waco, United States Duration: Apr 19 2022 → Apr 20 2022

Publication series

Name	Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022

Conference

Conference	2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022
Country/Territory	United States
City	Waco
Period	04/19/22 → 04/20/22

Keywords

5G
Adaptive Biasing
Broadband Power Amplifier (PA)
CMOS SOI
Millimeter-Wave (mm-Wave)
Power Backoff

Access to Document

10.1109/WMCS55582.2022.9866339

Cite this

Sweeney, C., Mayeda, J., Lie, D. Y. C., & Lopez, J. (2022). An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI. In Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022 (Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCS55582.2022.9866339

Sweeney, Clint ; Mayeda, Jill ; Lie, Donald Y.C. et al. / An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI. Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022).

@inproceedings{353672fae1454110aed8d604306251e1,

title = "An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI",

abstract = "The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.",

keywords = "5G, Adaptive Biasing, Broadband Power Amplifier (PA), CMOS SOI, Millimeter-Wave (mm-Wave), Power Backoff",

author = "Clint Sweeney and Jill Mayeda and Lie, {Donald Y.C.} and Jerry Lopez",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022 ; Conference date: 19-04-2022 Through 20-04-2022",

year = "2022",

doi = "10.1109/WMCS55582.2022.9866339",

language = "English",

series = "Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022",

}

Sweeney, C, Mayeda, J, Lie, DYC & Lopez, J 2022, An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI. in Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022. Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022, Waco, United States, 04/19/22. https://doi.org/10.1109/WMCS55582.2022.9866339

An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI. / Sweeney, Clint; Mayeda, Jill; Lie, Donald Y.C. et al.
Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI

AU - Sweeney, Clint

AU - Mayeda, Jill

AU - Lie, Donald Y.C.

AU - Lopez, Jerry

PY - 2022

Y1 - 2022

N2 - The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.

AB - The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 - 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.

KW - 5G

KW - Adaptive Biasing

KW - Broadband Power Amplifier (PA)

KW - CMOS SOI

KW - Millimeter-Wave (mm-Wave)

KW - Power Backoff

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U2 - 10.1109/WMCS55582.2022.9866339

DO - 10.1109/WMCS55582.2022.9866339

M3 - Conference contribution

AN - SCOPUS:85138485152

T3 - Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022

BT - Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022

Y2 - 19 April 2022 through 20 April 2022

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Sweeney C, Mayeda J, Lie DYC, Lopez J. An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI. In Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2022). doi: 10.1109/WMCS55582.2022.9866339

An 18.7 - 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI

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