AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy

G. Kipshidze; V. Kuryatkov; K. Choi; Iu Gherasoiu; B. Borisov; S. Nikishin; M. Holtz; D. Tsvetkov; V. Dmitriev; H. Temkin

doi:10.1002/1521-396x(200112)188:2<881::aid-pssa881>3.0.co;2-%23

AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy

G. Kipshidze, V. Kuryatkov, K. Choi, Iu Gherasoiu, B. Borisov, S. Nikishin, M. Holtz, D. Tsvetkov, V. Dmitriev, H. Temkin

Electrical and Computer Engineering

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16 Scopus citations

Abstract

We describe gas source molecular beam epitaxy (GSMBE) of AlN/AlGaN Bragg reflectors (BRs) designed for the spectral region of 250-450 nm. To minimize absorption these structures are grown without GaN layers. BRs described here were grown on sapphire substrates and sapphire substrates with AlN buffers deposited by hydride vapor phase epitaxy (HVPE). The growth mode and surface structure were monitored with reflection high-energy electron diffraction (RHEED). Growth rates and compositions were controlled using in-situ interferometric pyrometry. The BRs described here show excellent reflectivities and are free of cracks over 2 inch diameter wafers.

Original language	English
Pages (from-to)	881-884
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396x(200112)188:2<881::aid-pssa881>3.0.co;2-%23
State	Published - Nov 2001

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title = "AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy",

abstract = "We describe gas source molecular beam epitaxy (GSMBE) of AlN/AlGaN Bragg reflectors (BRs) designed for the spectral region of 250-450 nm. To minimize absorption these structures are grown without GaN layers. BRs described here were grown on sapphire substrates and sapphire substrates with AlN buffers deposited by hydride vapor phase epitaxy (HVPE). The growth mode and surface structure were monitored with reflection high-energy electron diffraction (RHEED). Growth rates and compositions were controlled using in-situ interferometric pyrometry. The BRs described here show excellent reflectivities and are free of cracks over 2 inch diameter wafers.",

author = "G. Kipshidze and V. Kuryatkov and K. Choi and Iu Gherasoiu and B. Borisov and S. Nikishin and M. Holtz and D. Tsvetkov and V. Dmitriev and H. Temkin",

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doi = "10.1002/1521-396x(200112)188:2<881::aid-pssa881>3.0.co;2-%23",

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T1 - AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy

AU - Kipshidze, G.

AU - Kuryatkov, V.

AU - Choi, K.

AU - Gherasoiu, Iu

AU - Borisov, B.

AU - Nikishin, S.

AU - Holtz, M.

AU - Tsvetkov, D.

AU - Dmitriev, V.

AU - Temkin, H.

PY - 2001/11

Y1 - 2001/11

N2 - We describe gas source molecular beam epitaxy (GSMBE) of AlN/AlGaN Bragg reflectors (BRs) designed for the spectral region of 250-450 nm. To minimize absorption these structures are grown without GaN layers. BRs described here were grown on sapphire substrates and sapphire substrates with AlN buffers deposited by hydride vapor phase epitaxy (HVPE). The growth mode and surface structure were monitored with reflection high-energy electron diffraction (RHEED). Growth rates and compositions were controlled using in-situ interferometric pyrometry. The BRs described here show excellent reflectivities and are free of cracks over 2 inch diameter wafers.

AB - We describe gas source molecular beam epitaxy (GSMBE) of AlN/AlGaN Bragg reflectors (BRs) designed for the spectral region of 250-450 nm. To minimize absorption these structures are grown without GaN layers. BRs described here were grown on sapphire substrates and sapphire substrates with AlN buffers deposited by hydride vapor phase epitaxy (HVPE). The growth mode and surface structure were monitored with reflection high-energy electron diffraction (RHEED). Growth rates and compositions were controlled using in-situ interferometric pyrometry. The BRs described here show excellent reflectivities and are free of cracks over 2 inch diameter wafers.

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DO - 10.1002/1521-396x(200112)188:2<881::aid-pssa881>3.0.co;2-%23

M3 - Article

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy

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