Ultraviolet light-emitting diodes (LED), based on the AlN/AlGaInN superlattices, were grown by gas source molecular-beam epitaxy. Data from the cathodoluminescence spectra of the superlattices was interpreted as the measure of electron-hole recombination energy. Hall measurements on the superlattices were used to determine the in-plane mobility and resistivity. The complex behaviour of the electroluminescence obtained in the LEDs was influenced by the design of the active region and the device fabrication procedure.
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Feb 1 2003|