AlN/AlGaInN superlattice light-emitting diodes at 280 nm

G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, H. Temkin

Research output: Contribution to journalArticle

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Abstract

Ultraviolet light-emitting diodes (LED), based on the AlN/AlGaInN superlattices, were grown by gas source molecular-beam epitaxy. Data from the cathodoluminescence spectra of the superlattices was interpreted as the measure of electron-hole recombination energy. Hall measurements on the superlattices were used to determine the in-plane mobility and resistivity. The complex behaviour of the electroluminescence obtained in the LEDs was influenced by the design of the active region and the device fabrication procedure.

Original languageEnglish
Pages (from-to)1363-1366
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number3
DOIs
StatePublished - Feb 1 2003

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    Kipshidze, G., Kuryatkov, V., Zhu, K., Borisov, B., Holtz, M., Nikishin, S., & Temkin, H. (2003). AlN/AlGaInN superlattice light-emitting diodes at 280 nm. Journal of Applied Physics, 93(3), 1363-1366. https://doi.org/10.1063/1.1535255