Abstract
Ultraviolet light-emitting diodes (LED), based on the AlN/AlGaInN superlattices, were grown by gas source molecular-beam epitaxy. Data from the cathodoluminescence spectra of the superlattices was interpreted as the measure of electron-hole recombination energy. Hall measurements on the superlattices were used to determine the in-plane mobility and resistivity. The complex behaviour of the electroluminescence obtained in the LEDs was influenced by the design of the active region and the device fabrication procedure.
Original language | English |
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Pages (from-to) | 1363-1366 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 3 |
DOIs | |
State | Published - Feb 1 2003 |