AlN periodic multilayer structures grown by MOVPE for high quality buffer layer.

Vladimir V Kuryatkov, W Feng, Mahesh Pandikunta, D Rosenbladt, B Borisov, Sergey Nikishin, Mark Holtz

Research output: Contribution to conferencePaper

Abstract

High crystal quality crack-free AlN on sapphire was grown by low pressure metal organic vapor phase epitaxy (MOVPE). Growth experiments combine two recent approaches: the ammonia pulse-flow method and ammonia continuous-flow growth mode by varying the V/III ratio. The detailed aspects of MOVPE, employing the periodic multilayer approach at low, intermediate, and high temperatures are described. This method yields significant reduction of screw dislocation density and provides very smooth surface for thin AlN layers.
Original languageEnglish
StatePublished - 2010

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    Kuryatkov, V. V., Feng, W., Pandikunta, M., Rosenbladt, D., Borisov, B., Nikishin, S., & Holtz, M. (2010). AlN periodic multilayer structures grown by MOVPE for high quality buffer layer..