AlN periodic multilayer structures grown by MOVPE for high quality buffer layer

V. V. Kuryatkov, W. Feng, M. Pandikunta, D. Rosenbladt, B. Borisov, S. A. Nikishin, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

High crystal quality crack-free AlN on sapphire was grown by low pressure metal organic vapor phase epitaxy (MOVPE). Growth experiments combine two recent approaches: the ammonia pulse-flow method and ammonia continuous-flow growth mode by varying the V/III ratio. The detailed aspects of MOVPE, employing the periodic multilayer approach at low, intermediate, and high temperatures are described. This method yields significant reduction of screw dislocation density and provides very smooth surface for thin AlN layers.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages191-196
Number of pages6
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1202
ISSN (Print)0272-9172

Conference

Conference2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/4/09

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