Alloy broadening of the deep electronic levels associated with the As vacancy in AlxGa1-xAs

The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As) vacancy in AlxGa1-xAs is investigated using the embedded-cluster method to describe the disordered alloy host and the theory of deep levels to compute the defect energies. Results are presented for the composition dependences of the center, width, and component levels of the alloy-broadened spectra produced by both the s-like and the p-like vacancy-associated levels.