All-CMOS subbandgap reference circuit operating at low supply voltage

Yi Yang; David M. Binkley; Lu Li; Changzhan Gu; Changzhi Li

doi:10.1109/ISCAS.2011.5937710

All-CMOS subbandgap reference circuit operating at low supply voltage

Yi Yang, David M. Binkley, Lu Li, Changzhan Gu, Changzhi Li

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100 °C. Measurements of a chip fabricated in UMC 0.13 m CMOS technology indicate the capability of operation with a 0.4 V supply voltage.

Original language	English
Title of host publication	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages	893-896
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2011.5937710
State	Published - 2011
Event	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil Duration: May 15 2011 → May 18 2011

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Country/Territory	Brazil
City	Rio de Janeiro
Period	05/15/11 → 05/18/11

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10.1109/ISCAS.2011.5937710

Cite this

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title = "All-CMOS subbandgap reference circuit operating at low supply voltage",

abstract = "This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100 °C. Measurements of a chip fabricated in UMC 0.13 m CMOS technology indicate the capability of operation with a 0.4 V supply voltage.",

author = "Yi Yang and Binkley, {David M.} and Lu Li and Changzhan Gu and Changzhi Li",

year = "2011",

doi = "10.1109/ISCAS.2011.5937710",

language = "English",

isbn = "9781424494736",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "893--896",

booktitle = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011",

note = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 ; Conference date: 15-05-2011 Through 18-05-2011",

}

Yang, Y, Binkley, DM, Li, L, Gu, C & Li, C 2011, All-CMOS subbandgap reference circuit operating at low supply voltage. in 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011., 5937710, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 893-896, 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011, Rio de Janeiro, Brazil, 05/15/11. https://doi.org/10.1109/ISCAS.2011.5937710

All-CMOS subbandgap reference circuit operating at low supply voltage. / Yang, Yi; Binkley, David M.; Li, Lu et al.
2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011. 2011. p. 893-896 5937710 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - All-CMOS subbandgap reference circuit operating at low supply voltage

AU - Yang, Yi

AU - Binkley, David M.

AU - Li, Lu

AU - Gu, Changzhan

AU - Li, Changzhi

PY - 2011

Y1 - 2011

N2 - This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100 °C. Measurements of a chip fabricated in UMC 0.13 m CMOS technology indicate the capability of operation with a 0.4 V supply voltage.

AB - This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100 °C. Measurements of a chip fabricated in UMC 0.13 m CMOS technology indicate the capability of operation with a 0.4 V supply voltage.

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U2 - 10.1109/ISCAS.2011.5937710

DO - 10.1109/ISCAS.2011.5937710

M3 - Conference contribution

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SN - 9781424494736

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 893

EP - 896

BT - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011

T2 - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011

Y2 - 15 May 2011 through 18 May 2011

ER -

All-CMOS subbandgap reference circuit operating at low supply voltage

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