All-CMOS subbandgap reference circuit operating at low supply voltage

Yi Yang, David M. Binkley, Lu Li, Changzhan Gu, Changzhi Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100 °C. Measurements of a chip fabricated in UMC 0.13 m CMOS technology indicate the capability of operation with a 0.4 V supply voltage.

Original languageEnglish
Title of host publication2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages893-896
Number of pages4
DOIs
StatePublished - 2011
Event2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil
Duration: May 15 2011May 18 2011

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
CountryBrazil
CityRio de Janeiro
Period05/15/1105/18/11

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    Yang, Y., Binkley, D. M., Li, L., Gu, C., & Li, C. (2011). All-CMOS subbandgap reference circuit operating at low supply voltage. In 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 (pp. 893-896). [5937710] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2011.5937710