The fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.
|Number of pages||5|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2002|
|Event||Gan and Related Alloys - 2002 - Boston, MA, United States|
Duration: Dec 2 2002 → Dec 6 2002