AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Jianqin Qu, Jing Li, Guoyi Zhang

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High quality AlGaN/GaN heterostructures have been grown by metalorganic vapor phase epitaxy (MOVPE). The crystal quality was investigated by X-ray diffraction and Rutherford Backscattering (RBS). Cracking was observed near the interface of the AlGaN and GaN epilayer when the thickness of AlGaN layer exceeds a critical value. Following Matthews' model, a calculation of the critical thickness was performed which agrees with the experiment.

Original languageEnglish
Pages (from-to)467-470
Number of pages4
JournalSolid State Communications
Issue number9
StatePublished - Jul 24 1998



  • A. semiconductor
  • B. crystal growth
  • B. epitaxy
  • Thin films

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