Abstract
High quality AlGaN/GaN heterostructures have been grown by metalorganic vapor phase epitaxy (MOVPE). The crystal quality was investigated by X-ray diffraction and Rutherford Backscattering (RBS). Cracking was observed near the interface of the AlGaN and GaN epilayer when the thickness of AlGaN layer exceeds a critical value. Following Matthews' model, a calculation of the critical thickness was performed which agrees with the experiment.
Original language | English |
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Pages (from-to) | 467-470 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 107 |
Issue number | 9 |
DOIs | |
State | Published - Jul 24 1998 |
Keywords
- A. semiconductor
- B. crystal growth
- B. epitaxy
- Thin films