AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze; V. Kuryatkov; B. Borisov; M. Holtz; S. Nikishin; H. Temkin

doi:10.1063/1.1480886

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, S. Nikishin, H. Temkin

Electrical and Computer Engineering

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80 Scopus citations

Abstract

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 ¹⁷cm^-3, with a mobility of 8 cm²/Vs, is measured in Al_0.4Ga_0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

Original language	English
Pages (from-to)	3682-3684
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	20
DOIs	https://doi.org/10.1063/1.1480886
State	Published - May 20 2002

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Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., & Temkin, H. (2002). AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80(20), 3682-3684. https://doi.org/10.1063/1.1480886

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abstract = "Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.",

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AU - Kipshidze, G.

AU - Kuryatkov, V.

AU - Borisov, B.

AU - Holtz, M.

AU - Nikishin, S.

AU - Temkin, H.

PY - 2002/5/20

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AB - Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

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