Abstract
Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.
Original language | English |
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Pages (from-to) | 3682-3684 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 20 |
DOIs | |
State | Published - May 20 2002 |