AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze; V. Kuryatkov; B. Borisov; M. Holtz; S. Nikishin; H. Temkin

doi:10.1063/1.1480886

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, S. Nikishin, H. Temkin

Electrical and Computer Engineering

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81 Scopus citations

Abstract

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 ¹⁷cm^-3, with a mobility of 8 cm²/Vs, is measured in Al_0.4Ga_0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

Original language	English
Pages (from-to)	3682-3684
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	20
DOIs	https://doi.org/10.1063/1.1480886
State	Published - May 20 2002

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@article{01cacf2553864c22ad3a721a68c6b402,

title = "AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)",

abstract = "Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.",

author = "G. Kipshidze and V. Kuryatkov and B. Borisov and M. Holtz and S. Nikishin and H. Temkin",

year = "2002",

month = may,

day = "20",

doi = "10.1063/1.1480886",

language = "English",

volume = "80",

pages = "3682--3684",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "20",

}

TY - JOUR

T1 - AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

AU - Kipshidze, G.

AU - Kuryatkov, V.

AU - Borisov, B.

AU - Holtz, M.

AU - Nikishin, S.

AU - Temkin, H.

PY - 2002/5/20

Y1 - 2002/5/20

N2 - Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

AB - Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

UR - http://www.scopus.com/inward/record.url?scp=79956010314&partnerID=8YFLogxK

U2 - 10.1063/1.1480886

DO - 10.1063/1.1480886

M3 - Article

AN - SCOPUS:79956010314

VL - 80

SP - 3682

EP - 3684

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

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