AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, S. Nikishin, H. Temkin

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Abstract

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×10 17cm-3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

Original languageEnglish
Pages (from-to)3682-3684
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number20
DOIs
StatePublished - May 20 2002

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    Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., & Temkin, H. (2002). AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80(20), 3682-3684. https://doi.org/10.1063/1.1480886