Al rich AlN/AlGaN quantum wells

Talai Mohammad Al Tantamount, Neeraj Nepal, Jingyu Lin, Hongxing Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two sets of AlN/AlxGa1-xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1-xN QWs with (x - 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1-xN with (U = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of - 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Pages13-18
Number of pages6
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

Fingerprint Dive into the research topics of 'Al rich AlN/AlGaN quantum wells'. Together they form a unique fingerprint.

  • Cite this

    Al Tantamount, T. M., Nepal, N., Lin, J., & Jiang, H. (2006). Al rich AlN/AlGaN quantum wells. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 13-18). (Materials Research Society Symposium Proceedings; Vol. 955).