Al rich AlN/AlGaN quantum wells

Talai Mohammad Al Tantamount; Neeraj Nepal; Jingyu Lin; Hongxing Jiang

Al rich AlN/AlGaN quantum wells

Talai Mohammad Al Tantamount, Neeraj Nepal, Jingyu Lin, Hongxing Jiang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two sets of AlN/Al_xGa_1-xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/Al_xGa_1-xN QWs with (x - 0.65) with well width, L_w, varying from 1 to 3 nm. The second set consists of four samples of AlN/Al_xGa_1-xN with (U = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L_w dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of - 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L_w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L_w yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Pages	13-18
Number of pages	6
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

Cite this

@inproceedings{cbf5f2d92ba647b98f9de9fbfb19af6f,

title = "Al rich AlN/AlGaN quantum wells",

abstract = "Two sets of AlN/AlxGa1-xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1-xN QWs with (x - 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1-xN with (U = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of - 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.",

author = "{Al Tantamount}, {Talai Mohammad} and Neeraj Nepal and Jingyu Lin and Hongxing Jiang",

year = "2006",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

pages = "13--18",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "null ; Conference date: 27-11-2006 Through 01-12-2006",

}

TY - GEN

T1 - Al rich AlN/AlGaN quantum wells

AU - Al Tantamount, Talai Mohammad

AU - Nepal, Neeraj

AU - Lin, Jingyu

AU - Jiang, Hongxing

PY - 2006

Y1 - 2006

N2 - Two sets of AlN/AlxGa1-xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1-xN QWs with (x - 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1-xN with (U = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of - 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

AB - Two sets of AlN/AlxGa1-xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1-xN QWs with (x - 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1-xN with (U = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of - 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=40949104866&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:40949104866

SN - 9781604234114

T3 - Materials Research Society Symposium Proceedings

SP - 13

EP - 18

BT - Advances in III-V Nitride Semiconductor Materials and Devices

Y2 - 27 November 2006 through 1 December 2006

ER -

Al rich AlN/AlGaN quantum wells

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