Advances in III-nitride micro-size light emitters

Hongxing Jiang; Jingyu Lin

doi:10.1016/S0961-1290(01)80261-1

Advances in III-nitride micro-size light emitters

Hongxing Jiang, Jingyu Lin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Electrically pumped III-nitride micro size light emitting diodes (LED) and micro-LED arrays were fabricated from LED wafers based on InGaN/GaN quantum wells to observe the quantum efficiencies. Using photolithographic patterning and inductively coupled plasms (ICP) dry etching microdisk arrays were fabricated. Bright blue LED established the possibility of full colour displays and mixing of three primary colours to obtain white light for illumination. Hundreds of III-nitride micro size LEDs were interconnected to boost the emission efficiency by 50%. The problems of low extraction efficiencies and current spreading were also resolved by these devices. An increased operating speed was observed due to enhanced radiative recombination rate.

Original language	English
Pages (from-to)	32-37
Number of pages	6
Journal	III-Vs Review
Volume	14
Issue number	5
DOIs	https://doi.org/10.1016/S0961-1290(01)80261-1
State	Published - 2001

Access to Document

10.1016/S0961-1290(01)80261-1

Cite this

@article{21ad567261b24b4fb8a14dbb8230acbc,

title = "Advances in III-nitride micro-size light emitters",

abstract = "Electrically pumped III-nitride micro size light emitting diodes (LED) and micro-LED arrays were fabricated from LED wafers based on InGaN/GaN quantum wells to observe the quantum efficiencies. Using photolithographic patterning and inductively coupled plasms (ICP) dry etching microdisk arrays were fabricated. Bright blue LED established the possibility of full colour displays and mixing of three primary colours to obtain white light for illumination. Hundreds of III-nitride micro size LEDs were interconnected to boost the emission efficiency by 50%. The problems of low extraction efficiencies and current spreading were also resolved by these devices. An increased operating speed was observed due to enhanced radiative recombination rate.",

author = "Hongxing Jiang and Jingyu Lin",

year = "2001",

doi = "10.1016/S0961-1290(01)80261-1",

language = "English",

volume = "14",

pages = "32--37",

journal = "III-Vs Review",

issn = "0961-1290",

number = "5",

}

TY - JOUR

T1 - Advances in III-nitride micro-size light emitters

AU - Jiang, Hongxing

AU - Lin, Jingyu

PY - 2001

Y1 - 2001

N2 - Electrically pumped III-nitride micro size light emitting diodes (LED) and micro-LED arrays were fabricated from LED wafers based on InGaN/GaN quantum wells to observe the quantum efficiencies. Using photolithographic patterning and inductively coupled plasms (ICP) dry etching microdisk arrays were fabricated. Bright blue LED established the possibility of full colour displays and mixing of three primary colours to obtain white light for illumination. Hundreds of III-nitride micro size LEDs were interconnected to boost the emission efficiency by 50%. The problems of low extraction efficiencies and current spreading were also resolved by these devices. An increased operating speed was observed due to enhanced radiative recombination rate.

AB - Electrically pumped III-nitride micro size light emitting diodes (LED) and micro-LED arrays were fabricated from LED wafers based on InGaN/GaN quantum wells to observe the quantum efficiencies. Using photolithographic patterning and inductively coupled plasms (ICP) dry etching microdisk arrays were fabricated. Bright blue LED established the possibility of full colour displays and mixing of three primary colours to obtain white light for illumination. Hundreds of III-nitride micro size LEDs were interconnected to boost the emission efficiency by 50%. The problems of low extraction efficiencies and current spreading were also resolved by these devices. An increased operating speed was observed due to enhanced radiative recombination rate.

UR - http://www.scopus.com/inward/record.url?scp=0035361895&partnerID=8YFLogxK

U2 - 10.1016/S0961-1290(01)80261-1

DO - 10.1016/S0961-1290(01)80261-1

M3 - Article

AN - SCOPUS:0035361895

SN - 0961-1290

VL - 14

SP - 32

EP - 37

JO - III-Vs Review

JF - III-Vs Review

IS - 5

ER -

Advances in III-nitride micro-size light emitters

Abstract

Access to Document

Other files and links

Fingerprint

Cite this