Electrically pumped III-nitride micro size light emitting diodes (LED) and micro-LED arrays were fabricated from LED wafers based on InGaN/GaN quantum wells to observe the quantum efficiencies. Using photolithographic patterning and inductively coupled plasms (ICP) dry etching microdisk arrays were fabricated. Bright blue LED established the possibility of full colour displays and mixing of three primary colours to obtain white light for illumination. Hundreds of III-nitride micro size LEDs were interconnected to boost the emission efficiency by 50%. The problems of low extraction efficiencies and current spreading were also resolved by these devices. An increased operating speed was observed due to enhanced radiative recombination rate.