Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

Pankaj B. Shah, Bruce R. Geil, Timothy E. Griffin, Stephen B. Bayne, Kenneth A. Jones, Timothy Oldham

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations.

Original languageEnglish
Pages (from-to)1073-1079
Number of pages7
JournalIEEE Transactions on Power Electronics
Volume17
Issue number6
DOIs
StatePublished - Nov 2002

Keywords

  • Power semiconductor devices
  • Power semiconductor switches
  • Semiconductor device modeling
  • Semiconductor device reliability
  • Thyristors

Fingerprint Dive into the research topics of 'Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors'. Together they form a unique fingerprint.

Cite this