TY - JOUR
T1 - Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors
AU - Shah, Pankaj B.
AU - Geil, Bruce R.
AU - Griffin, Timothy E.
AU - Bayne, Stephen B.
AU - Jones, Kenneth A.
AU - Oldham, Timothy
PY - 2002/11
Y1 - 2002/11
N2 - SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations.
AB - SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations.
KW - Power semiconductor devices
KW - Power semiconductor switches
KW - Semiconductor device modeling
KW - Semiconductor device reliability
KW - Thyristors
UR - http://www.scopus.com/inward/record.url?scp=0036876059&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2002.805591
DO - 10.1109/TPEL.2002.805591
M3 - Article
AN - SCOPUS:0036876059
SN - 0885-8993
VL - 17
SP - 1073
EP - 1079
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 6
ER -