SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations.
|Number of pages
|Published - 2001
|16th Annual IEEE Applied Power Electronics Conference and Exposition - Anaheim, CA, United States
Duration: Mar 4 2001 → Mar 8 2001
|16th Annual IEEE Applied Power Electronics Conference and Exposition
|03/4/01 → 03/8/01