Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

P. B. Shah, B. R. Geil, M. E. Ervin, T. E. Griffin, S. Bayne, K. A. Jones, T. R. Oldham

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations.

Original languageEnglish
Pages1232-1236
Number of pages5
StatePublished - 2001
Event16th Annual IEEE Applied Power Electronics Conference and Exposition - Anaheim, CA, United States
Duration: Mar 4 2001Mar 8 2001

Conference

Conference16th Annual IEEE Applied Power Electronics Conference and Exposition
CountryUnited States
CityAnaheim, CA
Period03/4/0103/8/01

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