Achieving p-InxGa1-xN alloys with high in contents

B. N. Pantha; A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1117/12.842313

Achieving p-In_xGa1_-xN alloys with high in contents

B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Mg-doped In_xGa_1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped In_xGa_1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (E_A) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed E_A in Mg-doped In_0.35Ga_0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ∼5 10¹⁸ cm ^-3 and hole mobility ∼3 cm²/Vs) was obtained in Mg-doped In_0.22Ga_0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices V
DOIs	https://doi.org/10.1117/12.842313
State	Published - 2010
Event	Gallium Nitride Materials and Devices V - San Francisco, CA, United States Duration: Jan 25 2010 → Jan 28 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7602
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices V
Country/Territory	United States
City	San Francisco, CA
Period	01/25/10 → 01/28/10

Keywords

Acceptor energy level
Hall Effect measurement
InGaN
MOCVD
PL
p-type doping

Access to Document

10.1117/12.842313

Cite this

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title = "Achieving p-InxGa1-xN alloys with high in contents",

abstract = "Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ∼5 1018 cm -3 and hole mobility ∼3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.",

keywords = "Acceptor energy level, Hall Effect measurement, InGaN, MOCVD, PL, p-type doping",

author = "Pantha, {B. N.} and A. Sedhain and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2010",

doi = "10.1117/12.842313",

language = "English",

isbn = "9780819479983",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices V",

note = "Gallium Nitride Materials and Devices V ; Conference date: 25-01-2010 Through 28-01-2010",

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TY - GEN

T1 - Achieving p-InxGa1-xN alloys with high in contents

AU - Pantha, B. N.

AU - Sedhain, A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2010

Y1 - 2010

N2 - Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ∼5 1018 cm -3 and hole mobility ∼3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

AB - Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ∼5 1018 cm -3 and hole mobility ∼3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

KW - Acceptor energy level

KW - Hall Effect measurement

KW - InGaN

KW - MOCVD

KW - PL

KW - p-type doping

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DO - 10.1117/12.842313

M3 - Conference contribution

AN - SCOPUS:77951750931

SN - 9780819479983

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices V

T2 - Gallium Nitride Materials and Devices V

Y2 - 25 January 2010 through 28 January 2010

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