Achieving p-InxGa1-xN alloys with high in contents

B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ∼5 1018 cm -3 and hole mobility ∼3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices V
StatePublished - 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices V
Country/TerritoryUnited States
CitySan Francisco, CA


  • Acceptor energy level
  • Hall Effect measurement
  • InGaN
  • PL
  • p-type doping


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