Abstract
Si-doped n-type AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. We have achieved highly conductive n-type AlxGa1-xN alloys for x up to 0.7. A conductivity (resistivity) value of 6.7 -1 cm-1 (0.15 cm) (with free electron concentration 2.1×1018cm-3 and mobility of 20 cm2/Vs at room temperature) has been achieved for Al0.65Ga0.35N, as confirmed by Hall-effect measurements. Our experimental results also revealed that (i) the conductivity of Al xGa1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content and (ii) there exists a critical Si-dopant concentration of about 1×1018cm-3 that is needed to convert insulating AlxGa1-xN with high Al content (x≥0.4) to n-type.
Original language | English |
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Pages (from-to) | 1038-1040 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 6 |
DOIs | |
State | Published - Aug 5 2002 |