Achieving highly conductive AlGaN alloys with high Al contents

K. B. Nam; J. Li; M. L. Nakarmi; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1492316

Achieving highly conductive AlGaN alloys with high Al contents

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

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Abstract

Si-doped n-type Al_xGa_1-xN alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. We have achieved highly conductive n-type Al_xGa_1-xN alloys for x up to 0.7. A conductivity (resistivity) value of 6.7 ^-1 cm^-1 (0.15 cm) (with free electron concentration 2.1×10¹⁸cm^-3 and mobility of 20 cm²/Vs at room temperature) has been achieved for Al_0.65Ga_0.35N, as confirmed by Hall-effect measurements. Our experimental results also revealed that (i) the conductivity of Al _xGa_1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content and (ii) there exists a critical Si-dopant concentration of about 1×10¹⁸cm^-3 that is needed to convert insulating Al_xGa_1-xN with high Al content (x≥0.4) to n-type.

Original language	English
Pages (from-to)	1038-1040
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.1492316
State	Published - Aug 5 2002

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title = "Achieving highly conductive AlGaN alloys with high Al contents",

abstract = "Si-doped n-type AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. We have achieved highly conductive n-type AlxGa1-xN alloys for x up to 0.7. A conductivity (resistivity) value of 6.7 -1 cm-1 (0.15 cm) (with free electron concentration 2.1×1018cm-3 and mobility of 20 cm2/Vs at room temperature) has been achieved for Al0.65Ga0.35N, as confirmed by Hall-effect measurements. Our experimental results also revealed that (i) the conductivity of Al xGa1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content and (ii) there exists a critical Si-dopant concentration of about 1×1018cm-3 that is needed to convert insulating AlxGa1-xN with high Al content (x≥0.4) to n-type.",

author = "Nam, {K. B.} and J. Li and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.}",

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T1 - Achieving highly conductive AlGaN alloys with high Al contents

AU - Nam, K. B.

AU - Li, J.

AU - Nakarmi, M. L.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2002/8/5

Y1 - 2002/8/5

N2 - Si-doped n-type AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. We have achieved highly conductive n-type AlxGa1-xN alloys for x up to 0.7. A conductivity (resistivity) value of 6.7 -1 cm-1 (0.15 cm) (with free electron concentration 2.1×1018cm-3 and mobility of 20 cm2/Vs at room temperature) has been achieved for Al0.65Ga0.35N, as confirmed by Hall-effect measurements. Our experimental results also revealed that (i) the conductivity of Al xGa1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content and (ii) there exists a critical Si-dopant concentration of about 1×1018cm-3 that is needed to convert insulating AlxGa1-xN with high Al content (x≥0.4) to n-type.

AB - Si-doped n-type AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. We have achieved highly conductive n-type AlxGa1-xN alloys for x up to 0.7. A conductivity (resistivity) value of 6.7 -1 cm-1 (0.15 cm) (with free electron concentration 2.1×1018cm-3 and mobility of 20 cm2/Vs at room temperature) has been achieved for Al0.65Ga0.35N, as confirmed by Hall-effect measurements. Our experimental results also revealed that (i) the conductivity of Al xGa1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content and (ii) there exists a critical Si-dopant concentration of about 1×1018cm-3 that is needed to convert insulating AlxGa1-xN with high Al content (x≥0.4) to n-type.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Achieving highly conductive AlGaN alloys with high Al contents

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