Accurate measurements of high pressure resistivity in a diamond anvil cell

Chunxiao Gao, Yonghao Han, Yanzhang Ma, Allen White, Hongwu Liu, Jifeng Luo, Ming Li, Chunyuan He, Aimin Hao, Xiaowei Huang, Yuewu Pan, Guangtian Zou

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Abstract

A new technique incorporating a diamond anvil cell with photolithographic and film deposition techniques has been developed for electrical resistivity measurement under high pressure. Molybdenum was sputtered onto a diamond anvil facet and patterned to the desired microcircuit. A sputtered Al 2O 3 (alumina) layer was then fabricated onto the Mo-coated layer to insulate the thin-film electrodes from the metallic gasket and to protect the electrodes against plastic deformation under high pressure conditions. For better insulation, Al 2O 3 was also sputtered onto the metallic gasket. The regular shape of the microcircuit makes it convenient to perform an electric current field analysis, hence, accurate resistivity data can be obtained from the measurement. We performed the measurement of nanocrystalline ZnS to 36 GPa and determined its reversibility and phase transition hysteresis.

Original languageEnglish
Article number083912
Pages (from-to)1-5
Number of pages5
JournalReview of Scientific Instruments
Volume76
Issue number8
DOIs
StatePublished - Aug 1 2005

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Gao, C., Han, Y., Ma, Y., White, A., Liu, H., Luo, J., Li, M., He, C., Hao, A., Huang, X., Pan, Y., & Zou, G. (2005). Accurate measurements of high pressure resistivity in a diamond anvil cell. Review of Scientific Instruments, 76(8), 1-5. [083912]. https://doi.org/10.1063/1.2006347