Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 20 2004|