Acceptor-bound exciton transition in Mg-doped AIN epilayer

N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.

Original languageEnglish
Pages (from-to)2271-2273
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - Sep 20 2004


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