Acceptor-bound exciton transition in Mg-doped AIN epilayer

N. Nepal; M. L. Nakarmi; K. B. Nam; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1796521

Acceptor-bound exciton transition in Mg-doped AIN epilayer

N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.

Original language	English
Pages (from-to)	2271-2273
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1796521
State	Published - Sep 20 2004

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title = "Acceptor-bound exciton transition in Mg-doped AIN epilayer",

abstract = "Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.",

author = "N. Nepal and Nakarmi, {M. L.} and Nam, {K. B.} and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This research is supported by grants from the NSF, ARO, and DOE.",

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doi = "10.1063/1.1796521",

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volume = "85",

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T1 - Acceptor-bound exciton transition in Mg-doped AIN epilayer

AU - Nepal, N.

AU - Nakarmi, M. L.

AU - Nam, K. B.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This research is supported by grants from the NSF, ARO, and DOE.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.

AB - Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy was used to study the Mg-doped AlN epilayers grown by metallorganic chemical-vapor deposition (MOCVD) method. At 10 K in Mg-doped AlN, a PL emission line at 6.02 ev was observed. The surface morphology of these epilayers was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results reveal that the large effective masses of the electrons and holes along with the energy level of Mg impurity to be the reason behind the large binding energy of the acceptor-bound exciton in AlN layers.

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DO - 10.1063/1.1796521

M3 - Article

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SN - 0003-6951

VL - 85

SP - 2271

EP - 2273

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Acceptor-bound exciton transition in Mg-doped AIN epilayer

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