Acceptor-bound exciton recombination dynamics in p-type GaN

M. Smith; G. D. Chen; J. Y. Lin; H. X. Jiang; M. Asif Khan; C. J. Sun

doi:10.1063/1.115225

Acceptor-bound exciton recombination dynamics in p-type GaN

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Dynamics of the neutral-acceptor-bound exciton transition (the I ₁ line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I₁ transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.

Original language	English
Pages (from-to)	3295
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115225
State	Published - 1995

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title = "Acceptor-bound exciton recombination dynamics in p-type GaN",

abstract = "Dynamics of the neutral-acceptor-bound exciton transition (the I 1 line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I1 transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.",

author = "M. Smith and Chen, {G. D.} and Lin, {J. Y.} and Jiang, {H. X.} and {Asif Khan}, M. and Sun, {C. J.}",

year = "1995",

doi = "10.1063/1.115225",

language = "English",

volume = "67",

pages = "3295",

journal = "Applied Physics Letters",

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T1 - Acceptor-bound exciton recombination dynamics in p-type GaN

AU - Smith, M.

AU - Chen, G. D.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Asif Khan, M.

AU - Sun, C. J.

PY - 1995

Y1 - 1995

N2 - Dynamics of the neutral-acceptor-bound exciton transition (the I 1 line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I1 transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.

AB - Dynamics of the neutral-acceptor-bound exciton transition (the I 1 line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I1 transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.

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U2 - 10.1063/1.115225

DO - 10.1063/1.115225

M3 - Article

AN - SCOPUS:0001062711

SN - 0003-6951

VL - 67

SP - 3295

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Acceptor-bound exciton recombination dynamics in p-type GaN

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