Acceptor-bound exciton recombination dynamics in p-type GaN

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

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Dynamics of the neutral-acceptor-bound exciton transition (the I 1 line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I1 transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.

Original languageEnglish
Pages (from-to)3295
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995


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